DOI: 10.1063/1.3271177. Nonvolatile resistive switching in graphene oxide thin films

Nonvolatile resistive switching in graphene oxide thin films

10.1063/1.3271177

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 104 s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications.

Bibliography

He, C. L., Zhuge, F., Zhou, X. F., Li, M., Zhou, G. C., Liu, Y. W., Wang, J. Z., Chen, B., Su, W. J., Liu, Z. P., Wu, Y. H., Cui, P., & Li, R.-W. (2009). Nonvolatile resistive switching in graphene oxide thin films. Applied Physics Letters, 95(23).

Authors 13

C. L. He (first)
F. Zhuge (additional)
X. F. Zhou (additional)
M. Li (additional)
G. C. Zhou (additional)
Y. W. Liu (additional)
J. Z. Wang (additional)
B. Chen (additional)
W. J. Su (additional)
Z. P. Liu (additional)
Y. H. Wu (additional)
P. Cui (additional)
Run-Wei Li (additional)

References 21 Referenced 231

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{'key': '2023062219015620100_c16', 'article-title': 'A scalable, solution-phase processing route to graphene oxide and graphene ultralarge sheets'} / A scalable, solution-phase processing route to graphene oxide and graphene ultralarge sheets
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Dates

Type	When
Created	15 years, 8 months ago (Dec. 7, 2009, 10:13 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 2:12 a.m.)
Indexed	1 month, 1 week ago (July 30, 2025, 6:53 a.m.)
Issued	15 years, 8 months ago (Dec. 7, 2009)
Published	15 years, 8 months ago (Dec. 7, 2009)
Published Online	15 years, 8 months ago (Dec. 7, 2009)
Published Print	15 years, 8 months ago (Dec. 7, 2009)

Funders 0

None

BibTeX

@article{He_2009, title={Nonvolatile resistive switching in graphene oxide thin films}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3271177}, DOI={10.1063/1.3271177}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={He, C. L. and Zhuge, F. and Zhou, X. F. and Li, M. and Zhou, G. C. and Liu, Y. W. and Wang, J. Z. and Chen, B. and Su, W. J. and Liu, Z. P. and Wu, Y. H. and Cui, P. and Li, Run-Wei}, year={2009}, month=dec }

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