Abstract
A new technique utilizing conventional x-ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It has been used in this work to study the details of the interface region of a molecular beam epitaxially grown Al single crystal on a molecular beam epitaxially grown GaAs single-crystal substrate. A simple model including variations of the lattice parameter and disorder in the interface region is in agreement with these experimental results.
References
7
Referenced
520
10.1080/14786442308634208
/ Philos. Mag. (1923){'key': '2024020421560472100_r2'}
{'key': '2024020421560472100_r3'}
10.1063/1.325286
/ J. Appl. Phys. (1978){'key': '2024020421560472100_r5'}
{'key': '2024020421560472100_r6'}
{'key': '2024020421560472100_r7'}
Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 5:07 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 5 p.m.) |
Indexed | 1 week, 3 days ago (Aug. 19, 2025, 6:05 a.m.) |
Issued | 45 years, 9 months ago (Nov. 1, 1979) |
Published | 45 years, 9 months ago (Nov. 1, 1979) |
Published Print | 45 years, 9 months ago (Nov. 1, 1979) |
@article{Marra_1979, title={X-ray total-external-reflection–Bragg diffraction: A structural study of the GaAs-Al interface}, volume={50}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.325845}, DOI={10.1063/1.325845}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Marra, W. C. and Eisenberger, P. and Cho, A. Y.}, year={1979}, month=nov, pages={6927–6933} }