DOI: 10.1063/1.325656. The effect of oxidation on the diffusion of phosphorus in silicon

The effect of oxidation on the diffusion of phosphorus in silicon

10.1063/1.325656

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The diffusion of phosphorus from a thick epitaxial layer into a silicon substrate has been investigated using the spreading-resistance technique. By comparing the diffusion profile under a free oxidized surface with the profile under a masked surface, it has been shown that surface oxidation enhances diffusion at low temperatures and retards diffusion at high temperatures. The conditions which favor enhanced diffusion are those under which stacking faults grow; retarded diffusion is associated with stacking-fault shrinkage. Enhanced diffusion is due to the oxide injecting excess interstitials into the substrate; retarded diffusion is caused by vacancy injection. It is concluded that phosphorus diffuses by the interstitialcy mechanism and that the criterion for interstitial or vacancy injection is the relative value of the anion and cation fluxes across the oxide-silicon interface.

Bibliography

Francis, R., & Dobson, P. S. (1979). The effect of oxidation on the diffusion of phosphorus in silicon. Journal of Applied Physics, 50(1), 280â284.

Authors 2

R. Francis (first)
P. S. Dobson (additional)

References 27 Referenced 78

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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 5:07 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 4:12 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 10:09 a.m.)
Issued	46 years, 7 months ago (Jan. 1, 1979)
Published	46 years, 7 months ago (Jan. 1, 1979)
Published Print	46 years, 7 months ago (Jan. 1, 1979)

Funders 0

None

BibTeX

@article{Francis_1979, title={The effect of oxidation on the diffusion of phosphorus in silicon}, volume={50}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.325656}, DOI={10.1063/1.325656}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Francis, R. and Dobson, P. S.}, year={1979}, month=jan, pages={280–284} }

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