DOI: 10.1063/1.325293. Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillators

Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillators

10.1063/1.325293

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

A Monte Carlo simulation is proposed and applied to study high-frequency behavior of hot carriers in semiconductors subjected to an arbitrary ac field superimposed on a strong dc field. With this end in view, the classical method was slightly modified into a mesh method: instead of testing the time spent between successive collisions, the scattering probabilities are tested after every time interval of suitable duration. This method checked by applying a static electric field allows us to obtain a few new results. Microwave and far-infrared room-temperature hot-carrier mobility for n-silicon is calculated and discussed. As an example of application, numerical results are used in the calculation of efficiency in millimeter transit-time oscillators which is shown to decrease in the millimeter range.

Bibliography

Zimmermann, J., Leroy, Y., & Constant, E. (1978). Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillators. Journal of Applied Physics, 49(6), 3378â3383.

Authors 3

J. Zimmermann (first)
Y. Leroy (additional)
E. Constant (additional)

References 17 Referenced 38

10.1103/PhysRevB.12.2265 / Phys. Rev. B (1975)
10.1016/0022-3697(75)90055-4 / J. Phys. Chem. Solids (1975)
10.1016/0022-3697(70)90001-6 / J. Phys. Chem. Solids (1970)
10.1016/0038-1101(77)90026-0 / Solid-State Electron. (1977)
10.1063/1.1662441 / J. Appl. Phys. (1973)
{'key': '2024020420503511600_r6'}
{'key': '2024020420503511600_r7'}
10.1063/1.88465 / Appl. Phys. Lett. (1975)
{'key': '2024020420503511600_r9'}
10.1063/1.89351 / Appl. Phys. Lett. (1977)
10.1002/j.1538-7305.1962.tb02415.x / Bell Syst. Tech. J. (1962)
{'key': '2024020420503511600_r12', 'first-page': '652', 'volume': 'ED-19', 'year': '1972', 'journal-title': 'IEEE Trans. Electron. Devices'} / IEEE Trans. Electron. Devices (1972)
10.1063/1.1661413 / J. Appl. Phys. (1972)
10.1063/1.1686768 / Rev. Sci. Instrum. (1974)
{'key': '2024020420503511600_r15'}
{'key': '2024020420503511600_r16', 'first-page': '127', 'volume': '17', 'year': '1974', 'journal-title': 'Acta Electron.'} / Acta Electron. (1974)
10.1063/1.321750 / J. Appl. Phys. (1975)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 4:46 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 3:50 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:21 a.m.)
Issued	47 years, 3 months ago (June 1, 1978)
Published	47 years, 3 months ago (June 1, 1978)
Published Print	47 years, 3 months ago (June 1, 1978)

Funders 0

None

BibTeX

@article{Zimmermann_1978, title={Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillators}, volume={49}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.325293}, DOI={10.1063/1.325293}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Zimmermann, J. and Leroy, Y. and Constant, E.}, year={1978}, month=jun, pages={3378–3383} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T14:21:56Z",
    "timestamp": 1707142916907
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "6",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1978,
        6,
        1
      ]
    ]
  },
  "abstract": "<jats:p>A Monte Carlo simulation is proposed and applied to study high-frequency behavior of hot carriers in semiconductors subjected to an arbitrary ac field superimposed on a strong dc field. With this end in view, the classical method was slightly modified into a mesh method: instead of testing the time spent between successive collisions, the scattering probabilities are tested after every time interval of suitable duration. This method checked by applying a static electric field allows us to obtain a few new results. Microwave and far-infrared room-temperature hot-carrier mobility for n-silicon is calculated and discussed. As an example of application, numerical results are used in the calculation of efficiency in millimeter transit-time oscillators which is shown to decrease in the millimeter range.</jats:p>",
  "DOI": "10.1063/1.325293",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        14
      ]
    ],
    "date-time": "2003-02-14T21:46:19Z",
    "timestamp": 1045259179000
  },
  "page": "3378-3383",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 38,
  "title": "Monte Carlo calculation of microwave and far-infrared hot-carrier mobility in N-Si: Efficiency of millimeter transit-time oscillators",
  "prefix": "10.1063",
  "volume": "49",
  "author": [
    {
      "given": "J.",
      "family": "Zimmermann",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Centre Hyperfr\u00e9quences et Semiconducteurs, E.R.A. au C.N.R.S. N\u00b0 454, Universite des Sciences et Techniques, BP 36, 59650 Villeneuve D'Ascq, France"
        }
      ]
    },
    {
      "given": "Y.",
      "family": "Leroy",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Centre Hyperfr\u00e9quences et Semiconducteurs, E.R.A. au C.N.R.S. N\u00b0 454, Universite des Sciences et Techniques, BP 36, 59650 Villeneuve D'Ascq, France"
        }
      ]
    },
    {
      "given": "E.",
      "family": "Constant",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Centre Hyperfr\u00e9quences et Semiconducteurs, E.R.A. au C.N.R.S. N\u00b0 454, Universite des Sciences et Techniques, BP 36, 59650 Villeneuve D'Ascq, France"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020420503511600_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2265",
      "DOI": "10.1103/PhysRevB.12.2265",
      "volume": "12",
      "year": "1975",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020420503511600_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1129",
      "DOI": "10.1016/0022-3697(75)90055-4",
      "volume": "36",
      "year": "1975",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020420503511600_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1963",
      "DOI": "10.1016/0022-3697(70)90001-6",
      "volume": "31",
      "year": "1970",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020420503511600_r4",
      "doi-asserted-by": "crossref",
      "first-page": "5",
      "DOI": "10.1016/0038-1101(77)90026-0",
      "volume": "20",
      "year": "1977",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2024020420503511600_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1744",
      "DOI": "10.1063/1.1662441",
      "volume": "44",
      "year": "1973",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020420503511600_r6"
    },
    {
      "key": "2024020420503511600_r7"
    },
    {
      "key": "2024020420503511600_r8",
      "doi-asserted-by": "crossref",
      "first-page": "278",
      "DOI": "10.1063/1.88465",
      "volume": "27",
      "year": "1975",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020420503511600_r9"
    },
    {
      "key": "2024020420503511600_r10",
      "doi-asserted-by": "crossref",
      "first-page": "245",
      "DOI": "10.1063/1.89351",
      "volume": "30",
      "year": "1977",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020420503511600_r11",
      "doi-asserted-by": "crossref",
      "first-page": "387",
      "DOI": "10.1002/j.1538-7305.1962.tb02415.x",
      "volume": "41",
      "year": "1962",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024020420503511600_r12",
      "first-page": "652",
      "volume": "ED-19",
      "year": "1972",
      "journal-title": "IEEE Trans. Electron. Devices"
    },
    {
      "key": "2024020420503511600_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1889",
      "DOI": "10.1063/1.1661413",
      "volume": "43",
      "year": "1972",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020420503511600_r14",
      "doi-asserted-by": "crossref",
      "first-page": "920",
      "DOI": "10.1063/1.1686768",
      "volume": "45",
      "year": "1974",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2024020420503511600_r15"
    },
    {
      "key": "2024020420503511600_r16",
      "first-page": "127",
      "volume": "17",
      "year": "1974",
      "journal-title": "Acta Electron."
    },
    {
      "key": "2024020420503511600_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1831",
      "DOI": "10.1063/1.321750",
      "volume": "46",
      "year": "1975",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/49/6/3378/18380369/3378_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/49/6/3378/18380369/3378_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T20:50:48Z",
    "timestamp": 1707079848000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/49/6/3378/9730/Monte-Carlo-calculation-of-microwave-and-far"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1978,
        6,
        1
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "6",
    "published-print": {
      "date-parts": [
        [
          1978,
          6,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.325293",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1978,
        6
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1978,
        6,
        1
      ]
    ]
  }
}