Abstract
The anisotropy in the carrier mobility due to the presence of dislocations in III-V compounds is determined using a method based on the equivalence of scattering energy loss and Joule heat created in the crystal. It is found that the mobility is a maximum perpendicular to the slip planes of 60° and 90° dislocations of both the α and β types of dislocations. Screw dislocations do not cause any scattering and consequently do not affect the mobility through this mechanism.
References
7
Referenced
5
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 4:46 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 3:28 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 4, 2024, 6:02 p.m.) |
Issued | 47 years, 6 months ago (March 1, 1978) |
Published | 47 years, 6 months ago (March 1, 1978) |
Published Print | 47 years, 6 months ago (March 1, 1978) |
@article{Booyens_1978, title={The anisotropic carrier mobility due to dislocations in III-V compounds}, volume={49}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.325058}, DOI={10.1063/1.325058}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Booyens, H. and Vermaak, J. S. and Proto, G. R.}, year={1978}, month=mar, pages={1173–1176} }