Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Boron films have been bombarded by He+ and H+ ions in the medium keV energy range at room temperature. The sputtering yields have been measured for doses of 1017–1018 ions/cm2 using a low-energy nuclear-reaction method, 11B(p,α) αα, near the 163-keV resonance, and distinguished from the erosion induced by blistering and flaking. No significant differences are found between experimental values and theoretical predictions, in contrast to the case of heavy targets bombarded by light ions.

Bibliography

Miyagawa, S., Ato, Y., & Moriya, Y. (1978). Sputtering yields of boron bombarded by light ions. Journal of Applied Physics, 49(12), 6194–6196.

Authors 3
  1. S. Miyagawa (first)
  2. Y. Ato (additional)
  3. Y. Moriya (additional)
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Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 4:46 p.m.)
Deposited 1 year, 6 months ago (Feb. 4, 2024, 4:11 p.m.)
Indexed 1 year, 6 months ago (Feb. 4, 2024, 4:40 p.m.)
Issued 46 years, 8 months ago (Dec. 1, 1978)
Published 46 years, 8 months ago (Dec. 1, 1978)
Published Print 46 years, 8 months ago (Dec. 1, 1978)
Funders 0

None

@article{Miyagawa_1978, title={Sputtering yields of boron bombarded by light ions}, volume={49}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.324522}, DOI={10.1063/1.324522}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Miyagawa, S. and Ato, Y. and Moriya, Y.}, year={1978}, month=dec, pages={6194–6196} }