Abstract
Boron films have been bombarded by He+ and H+ ions in the medium keV energy range at room temperature. The sputtering yields have been measured for doses of 1017–1018 ions/cm2 using a low-energy nuclear-reaction method, 11B(p,α) αα, near the 163-keV resonance, and distinguished from the erosion induced by blistering and flaking. No significant differences are found between experimental values and theoretical predictions, in contrast to the case of heavy targets bombarded by light ions.
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 4:46 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 4:11 p.m.) |
Indexed | 1 year, 6 months ago (Feb. 4, 2024, 4:40 p.m.) |
Issued | 46 years, 8 months ago (Dec. 1, 1978) |
Published | 46 years, 8 months ago (Dec. 1, 1978) |
Published Print | 46 years, 8 months ago (Dec. 1, 1978) |
@article{Miyagawa_1978, title={Sputtering yields of boron bombarded by light ions}, volume={49}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.324522}, DOI={10.1063/1.324522}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Miyagawa, S. and Ato, Y. and Moriya, Y.}, year={1978}, month=dec, pages={6194–6196} }