DOI: 10.1063/1.324416. Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon

Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon

10.1063/1.324416

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The recrystallization of Ne- and Kr-implanted amorphous silicon layers has been studied. Investigation of the growth kinetics at temperatures between 525 and 575 °C showed that the amorphous layer regrows completely. During annealing, 75% of the Ne diffused out while Kr out-diffusion could only be obtained by annealing the samples at 900 to 1000 °C after complete regrowth had already been established. TEM analysis revealed Ne bubbles in the as-implanted samples. Bubbles and microtwins in the epitaxially regrown layers were found in the Ne-implanted samples and in some of the Kr-implanted samples. Microtwins were only detected when bubbles were simultaneously present.

Bibliography

Wittmer, M., Roth, J., Revesz, P., & Mayer, J. W. (1978). Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon. Journal of Applied Physics, 49(10), 5207â5212.

Authors 4

M. Wittmer (first)
J. Roth (additional)
P. Revesz (additional)
J. W. Mayer (additional)

References 13 Referenced 67

{'key': '2024020421074932600_r1'}
10.1080/00337577108231090 / Radiat. Eff. (1971)
{'key': '2024020421074932600_r3'}
{'key': '2024020421074932600_r3a', 'first-page': '31', 'volume': '28', 'year': '1976', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1976)
{'key': '2024020421074932600_r4'}
{'key': '2024020421074932600_r5'}
{'key': '2024020421074932600_r5a'}
10.1063/1.324414 / J. Appl. Phys. (1978)
10.1016/0092-640X(74)90009-6 / At. Data Nucl. Data Tables (1974)
{'key': '2024020421074932600_r8'}
{'key': '2024020421074932600_r9'}
10.1063/1.323408 / J. Appl. Phys. (1977)
{'key': '2024020421074932600_r11'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 4:46 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 4:07 p.m.)
Indexed	2 months ago (June 25, 2025, 9:16 p.m.)
Issued	46 years, 11 months ago (Oct. 1, 1978)
Published	46 years, 11 months ago (Oct. 1, 1978)
Published Print	46 years, 11 months ago (Oct. 1, 1978)

Funders 0

None

BibTeX

@article{Wittmer_1978, title={Epitaxial regrowth of Ne- and Kr-implanted amorphous silicon}, volume={49}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.324416}, DOI={10.1063/1.324416}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Wittmer, M. and Roth, J. and Revesz, P. and Mayer, J. W.}, year={1978}, month=oct, pages={5207–5212} }

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