DOI: 10.1063/1.324253. High-field electron trapping in SiO2

10.1063/1.324253

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

When linear voltage ramps were applied to MOS capacitors, the current-vs-voltage (I-V) curves indicated a region of quasisaturation of current, i.e., a ledge in the I-V characteristic. These ledges could be explained by an electron-trapping model. Trap cross sections and concentrations were dependent on sample processing and oxide thickness and were in the 10−19 cm2 and 1012 cm−2 ranges, respectively. Comparison of shifts in the I-V and C-V curves showed that trapped charge to be within about 10 Å of the Si-SiO2 interface.

Bibliography

Solomon, P. (1977). High-field electron trapping in SiO2. Journal of Applied Physics, 48(9), 3843â3849.

Authors 1

P. Solomon (first)

References 22 Referenced 103

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10.1063/1.1652955 / Appl. Phys. Lett. (1969)
10.1063/1.1662633 / J. Appl. Phys. (1973)
10.1063/1.1663246 / J. Appl. Phys. (1974)
10.1063/1.88138 / Appl. Phys. Lett. (1975)
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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 4:28 p.m.)
Deposited	1 year, 7 months ago (Feb. 4, 2024, 3:07 p.m.)
Indexed	1 year, 2 months ago (July 5, 2024, 7:09 p.m.)
Issued	48 years ago (Sept. 1, 1977)
Published	48 years ago (Sept. 1, 1977)
Published Print	48 years ago (Sept. 1, 1977)

Funders 0

None

BibTeX

@article{Solomon_1977, title={High-field electron trapping in SiO2}, volume={48}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.324253}, DOI={10.1063/1.324253}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Solomon, P.}, year={1977}, month=sep, pages={3843–3849} }

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