DOI: 10.1063/1.324046. Auger profiling of ’’abrupt’’ LPE Al<i>x</i>Ga1−<i>x</i>As-GaAs heterojunctions

Auger profiling of ’’abrupt’’ LPE AlxGa1−xAs-GaAs heterojunctions

10.1063/1.324046

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Ion milling–Auger electron spectroscopy has been used to study, for the first time, the chemical widths of ’’abrupt’’ LPE AlxGa1−xAs-GaAs heterojunctions with composition x=0.43, 0.60, and 0.85. ’’Abrupt’’ LPE junctions were found to have chemical interface widths of &lt;90–130 Å.

Bibliography

Garner, C. M., Shen, Y. D., Kim, J. S., Pearso, G. L., Spicer, F. W. E., Harris, J. S., & Edwall, D. D. (1977). Auger profiling of ââabruptââ LPE AlxGa1âxAs-GaAs heterojunctions. Journal of Applied Physics, 48(7), 3147â3149.

Authors 7

C. M. Garner (first)
Y. D. Shen (additional)
J. S. Kim (additional)
G. L. Pearso (additional)
F W. E. Spicer (additional)
J. S. Harris (additional)
D. D. Edwall (additional)

References 13 Referenced 14

10.1016/0038-1101(62)90115-6 / Solid-State Electron. (1962)
10.1016/0038-1101(63)90005-4 / Solid-State Electron. (1963)
10.1063/1.89026 / Appl. Phys. Lett. (1976)
10.1016/0038-1101(75)90058-1 / Solid-State Electron. (1975)
10.1007/BF02652949 / J. Electron. Mater. (1974)
{'key': '2024020420033040100_r5'}
10.1063/1.89136 / Appl. Phys. Lett. (1976)
{'key': '2024020420033040100_r7'}
10.1063/1.1655242 / Appl. Phys. Lett. (1974)
10.1063/1.1660885 / J. Appl. Phys. (1972)
10.1063/1.321590 / J. Appl. Phys. (1975)
10.1080/10408437508243513 / CRC Crit. Rev. Solid-State Sci. (1975)
10.1016/0038-1101(63)90005-4 / Solid-State Electron. (1963)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 4:28 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 3:03 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 7:23 a.m.)
Issued	48 years, 1 month ago (July 1, 1977)
Published	48 years, 1 month ago (July 1, 1977)
Published Print	48 years, 1 month ago (July 1, 1977)

Funders 0

None

BibTeX

@article{Garner_1977, title={Auger profiling of ’’abrupt’’ LPE AlxGa1−xAs-GaAs heterojunctions}, volume={48}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.324046}, DOI={10.1063/1.324046}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Garner, C. M. and Shen, Y. D. and Kim, J. S. and Pearso, G. L. and Spicer, F W. E. and Harris, J. S. and Edwall, D. D.}, year={1977}, month=jul, pages={3147–3149} }

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