DOI: 10.1063/1.3238563. Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching

Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching

10.1063/1.3238563

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Heating of the Al/SrTiO3−xNy/Al memristor is characterized during electroformation and switching of the resistances. The electrode with the higher voltage potential is heated to higher temperatures than the electrode with the lower potential, suggesting a reversible (nonstable) displacement of the anions in a low voltage region (|V|&lt;±3 V). Application of a threshold voltage appropriate for resistance switching (|V|≥±3 V) facilitates migration of anions to the anode interface and increases the local anode temperature to a maximum of 285 °C. The hysteretic I-V curves are discussed taking into account tunnel barrier formation/break and inhomogeneous Schottky barrier modification at the anode interface.

Bibliography

Shkabko, A., Aguirre, M. H., Marozau, I., Lippert, T., & Weidenkaff, A. (2009). Measurements of current-voltage-induced heating in the Al/SrTiO3âxNy/Al memristor during electroformation and resistance switching. Applied Physics Letters, 95(15).

Authors 5

A. Shkabko (first)
M. H. Aguirre (additional)
I. Marozau (additional)
T. Lippert (additional)
A. Weidenkaff (additional)

References 16 Referenced 35

10.1038/nmat1614 / Nature Mater. (2006)
10.1063/1.1611263 / J. Appl. Phys. (2003)
10.1016/0022-3697(61)90138-X / J. Phys. Chem. Solids (1961)
10.1063/1.3139761 / Appl. Phys. Lett. (2009)
10.1002/adma.200602915 / Adv. Mater. (Weinheim, Ger.) (2007)
10.1063/1.3050519 / Appl. Phys. Lett. (2008)
10.1016/j.matchemphys.2008.11.024 / Mater. Chem. Phys. (2009)
See EPAPS supplementary material at http://dx.doi.org/10.1063/1.3238563 for synthesis, characterization, and figures. (10.1063/1.3238563)
{'volume-title': 'Electroceramics Materials, Properties, Applications', 'year': '2003', 'key': '2023070102474339900_c9'} / Electroceramics Materials, Properties, Applications (2003)
10.1103/PhysRevB.45.13509 / Phys. Rev. B (1992)
10.1063/1.328160 / J. Appl. Phys. (1980)
{'volume-title': 'Physics of Semiconductor Devices', 'year': '2007', 'key': '2023070102474339900_c12'} / Physics of Semiconductor Devices (2007)
10.1016/S0026-2714(96)00268-5 / Microelectron. Reliab. (1997)
10.1038/nmat2023 / Nature Mater. (2007)
10.1016/S0169-4332(97)80114-6 / Appl. Surf. Sci. (1997)
10.1063/1.123476 / Appl. Phys. Lett. (1999)

Dates

Type	When
Created	15 years, 10 months ago (Oct. 15, 2009, 7:04 p.m.)
Deposited	2 years, 1 month ago (June 30, 2023, 10:47 p.m.)
Indexed	1 month ago (July 30, 2025, 6:53 a.m.)
Issued	15 years, 10 months ago (Oct. 12, 2009)
Published	15 years, 10 months ago (Oct. 12, 2009)
Published Online	15 years, 10 months ago (Oct. 15, 2009)
Published Print	15 years, 10 months ago (Oct. 12, 2009)

Funders 0

None

BibTeX

@article{Shkabko_2009, title={Measurements of current-voltage-induced heating in the Al/SrTiO3−xNy/Al memristor during electroformation and resistance switching}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3238563}, DOI={10.1063/1.3238563}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shkabko, A. and Aguirre, M. H. and Marozau, I. and Lippert, T. and Weidenkaff, A.}, year={2009}, month=oct }

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