DOI: 10.1063/1.323260. Electron-irradiation-induced divacancy in lightly doped silicon

Electron-irradiation-induced divacancy in lightly doped silicon

10.1063/1.323260

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Two electron traps—A2 and A3—produced in n-type silicon by 1.5-MeV-electron irradiation are characterized by deep level transient spectroscopy. Activation energies of trapped majority carriers and capture cross sections for majority carriers at these levels are reported. From their production rates and annealing behaviors, they have been identified as different charge states of the same defect. Detailed annealing studies show that their annealing kinetics is first order with an activation energy of 1.47 eV. It is suggested that the defect is the divacancy and that dissociation is the likely process for its removal in these devices.

Bibliography

Evwaraye, A. O., & Sun, E. (1976). Electron-irradiation-induced divacancy in lightly doped silicon. Journal of Applied Physics, 47(9), 3776â3780.

Authors 2

A. O. Evwaraye (first)
Edmund Sun (additional)

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{'key': '2024020419241411700_r25'}
{'key': '2024020419241411700_r26'}
{'key': '2024020419241411700_r27'}

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 4:11 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 2:24 p.m.)
Indexed	1 month ago (July 25, 2025, 6:57 a.m.)
Issued	48 years, 11 months ago (Sept. 1, 1976)
Published	48 years, 11 months ago (Sept. 1, 1976)
Published Print	48 years, 11 months ago (Sept. 1, 1976)

Funders 0

None

BibTeX

@article{Evwaraye_1976, title={Electron-irradiation-induced divacancy in lightly doped silicon}, volume={47}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.323260}, DOI={10.1063/1.323260}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Evwaraye, A. O. and Sun, Edmund}, year={1976}, month=sep, pages={3776–3780} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        25
      ]
    ],
    "date-time": "2025-07-25T10:57:35Z",
    "timestamp": 1753441055044
  },
  "reference-count": 27,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1976,
        9,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Two electron traps\u2014A2 and A3\u2014produced in n-type silicon by 1.5-MeV-electron irradiation are characterized by deep level transient spectroscopy. Activation energies of trapped majority carriers and capture cross sections for majority carriers at these levels are reported. From their production rates and annealing behaviors, they have been identified as different charge states of the same defect. Detailed annealing studies show that their annealing kinetics is first order with an activation energy of 1.47 eV. It is suggested that the defect is the divacancy and that dissociation is the likely process for its removal in these devices.</jats:p>",
  "DOI": "10.1063/1.323260",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        14
      ]
    ],
    "date-time": "2003-02-14T21:11:22Z",
    "timestamp": 1045257082000
  },
  "page": "3776-3780",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 223,
  "title": "Electron-irradiation-induced divacancy in lightly doped silicon",
  "prefix": "10.1063",
  "volume": "47",
  "author": [
    {
      "given": "A. O.",
      "family": "Evwaraye",
      "sequence": "first",
      "affiliation": [
        {
          "name": "General Electric Corporate Research and Development, Schenectady, New York 12301"
        }
      ]
    },
    {
      "given": "Edmund",
      "family": "Sun",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "General Electric Company, Semiconductor Products Department, Auburn, New York 13201"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020419241411700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1272",
      "DOI": "10.1103/PhysRev.110.1272",
      "volume": "110",
      "year": "1958",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r2",
      "doi-asserted-by": "crossref",
      "first-page": "1414",
      "DOI": "10.1103/PhysRev.114.1414",
      "volume": "114",
      "year": "1959",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r3",
      "doi-asserted-by": "crossref",
      "first-page": "1232",
      "DOI": "10.1063/1.1735298",
      "volume": "30",
      "year": "1959",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r4",
      "doi-asserted-by": "crossref",
      "first-page": "3295",
      "DOI": "10.1063/1.1729181",
      "volume": "34",
      "year": "1963",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1811",
      "DOI": "10.1063/1.1714357",
      "volume": "36",
      "year": "1965",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r6",
      "doi-asserted-by": "crossref",
      "first-page": "913",
      "DOI": "10.1016/0022-3697(66)90061-8",
      "volume": "27",
      "year": "1966",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2024020419241411700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "427",
      "DOI": "10.1103/PhysRevB.3.427",
      "volume": "3",
      "year": "1971",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020419241411700_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1867",
      "DOI": "10.1063/1.1708616",
      "volume": "37",
      "year": "1966",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r9",
      "doi-asserted-by": "crossref",
      "first-page": "2197",
      "DOI": "10.1063/1.1714449",
      "volume": "36",
      "year": "1965",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1127",
      "DOI": "10.1063/1.1735282",
      "volume": "30",
      "year": "1959",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r11",
      "doi-asserted-by": "crossref",
      "first-page": "734",
      "DOI": "10.1103/PhysRev.173.734",
      "volume": "173",
      "year": "1968",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r12",
      "doi-asserted-by": "crossref",
      "first-page": "647",
      "DOI": "10.1103/PhysRevB.1.647",
      "volume": "1",
      "year": "1970",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020419241411700_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1455",
      "DOI": "10.1103/PhysRevB.5.1455",
      "volume": "5",
      "year": "1972",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020419241411700_r14",
      "doi-asserted-by": "crossref",
      "first-page": "513",
      "DOI": "10.1002/pssa.2210110214",
      "volume": "11",
      "year": "1972",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2024020419241411700_r15",
      "doi-asserted-by": "crossref",
      "first-page": "4587",
      "DOI": "10.1103/PhysRevB.7.4587",
      "volume": "7",
      "year": "1973",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020419241411700_r16",
      "doi-asserted-by": "crossref",
      "first-page": "171",
      "DOI": "10.1016/0038-1098(75)90818-2",
      "volume": "16",
      "year": "1975",
      "journal-title": "Solid State Commun."
    },
    {
      "key": "2024020419241411700_r17",
      "doi-asserted-by": "crossref",
      "first-page": "1195",
      "DOI": "10.1063/1.1735292",
      "volume": "30",
      "year": "1959",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r18",
      "doi-asserted-by": "crossref",
      "first-page": "A1359",
      "DOI": "10.1103/PhysRev.134.A1359",
      "volume": "134",
      "year": "1964",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r19",
      "doi-asserted-by": "crossref",
      "first-page": "86",
      "DOI": "10.1039/df9613100086",
      "volume": "31",
      "year": "1961",
      "journal-title": "Discuss. Faraday Soc."
    },
    {
      "key": "2024020419241411700_r20",
      "doi-asserted-by": "crossref",
      "first-page": "A543",
      "DOI": "10.1103/PhysRev.138.A543",
      "volume": "138",
      "year": "1965",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r21",
      "doi-asserted-by": "crossref",
      "first-page": "A555",
      "DOI": "10.1103/PhysRev.138.A555",
      "volume": "138",
      "year": "1965",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r22",
      "doi-asserted-by": "crossref",
      "first-page": "761",
      "DOI": "10.1103/PhysRev.152.761",
      "volume": "152",
      "year": "1966",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024020419241411700_r23",
      "doi-asserted-by": "crossref",
      "first-page": "3023",
      "DOI": "10.1063/1.1663719",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r24",
      "doi-asserted-by": "crossref",
      "first-page": "3172",
      "DOI": "10.1063/1.323112",
      "volume": "47",
      "year": "1976",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020419241411700_r25"
    },
    {
      "key": "2024020419241411700_r26"
    },
    {
      "key": "2024020419241411700_r27"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/47/9/3776/18374433/3776_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/47/9/3776/18374433/3776_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T19:24:26Z",
    "timestamp": 1707074666000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/47/9/3776/502442/Electron-irradiation-induced-divacancy-in-lightly"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1976,
        9,
        1
      ]
    ]
  },
  "references-count": 27,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          1976,
          9,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.323260",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1976,
        9
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1976,
        9,
        1
      ]
    ]
  }
}