DOI: 10.1063/1.321998. Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy

Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy

10.1063/1.321998

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

An isolated acceptor impurity is shown to be responsible for the ∼113-meV deep luminescence band which is frequently seen in GaAs layers grown by molecular-beam epitaxy. We establish that this center, which is also observed in melt-grown and solution-grown GaAs and which has often been associated with the presence of native defects, is due to Mn. The luminescence arises from donor-acceptor and conduction-band–acceptor recombination involving holes bound at the Mn acceptor. Electron paramagnetic resonance on Mn-doped layers shows that Mn is incorporated as an isolated defect with cubic symmetry. This result, coupled with the suppression of Mn-associated luminescence and electrical activation under Ga-rich growth conditions, indicates that Mn is incorporated primarily as a substitutional acceptor on Ga sites. Hole concentrations scale with Mn source temperature in a manner consistent with arrival-rate-controlled incorporation from a Knudsen effusion source. Room-temperature hole concentrations up to the 1018-cm−3 level can be achieved while maintaining excellent surface morphology. This suggests that Mn will be a useful dopant in the growth of junction structures by molecular-beam epitaxy.

Bibliography

Ilegems, M., Dingle, R., & Rupp Jr., L. W. (1975). Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy. Journal of Applied Physics, 46(7), 3059â3065.

Authors 3

M. Ilegems (first)
R. Dingle (additional)
L. W. Rupp Jr. (additional)

References 28 Referenced 143

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Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 3:50 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 1:35 p.m.)
Indexed	1 year, 1 month ago (July 31, 2024, 9:10 a.m.)
Issued	50 years, 2 months ago (July 1, 1975)
Published	50 years, 2 months ago (July 1, 1975)
Published Print	50 years, 2 months ago (July 1, 1975)

Funders 0

None

BibTeX

@article{Ilegems_1975, title={Optical and electrical properties of Mn-doped GaAs grown by molecular-beam epitaxy}, volume={46}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.321998}, DOI={10.1063/1.321998}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ilegems, M. and Dingle, R. and Rupp Jr., L. W.}, year={1975}, month=jul, pages={3059–3065} }

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