DOI: 10.1063/1.321900. Theory and interpretation of the field-effect conductance experiment in amorphous silicon

Theory and interpretation of the field-effect conductance experiment in amorphous silicon

10.1063/1.321900

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The field-effect conductance modulation experiment, performed on vacuum-evaporated amorphous silicon films, yielded better than three orders of magnitude change in current for both positive and negative gate voltages. The near symmetry of the plots and their change with deposition rate are interpreted in terms of a Cohen-Fritzsche-Ovshinsky-type density-of-states model. Calculations are presented for the model that includes the mobile charge and the mobility ratio of the carriers. Results are presented for room as well as for elevated temperatures. The Fermi energy is near the center of the mobility gap and the density of localized states is nearly uniform for ±0.4 eV above and below EF. At energies greater than 0.4 eV away from the Fermi energy, the density of the localized states is modeled by an increasing exponential out to the limit of the experimental data at about ±0.455 eV. The theory and experiment agree at room temperature and over a range of temperatures and sample preparation conditions. The localized states near EF decrease as the deposition rate decreases. A lower limit of from 6×1019 to 2×1020/cm3 eV remains and is sample preparation dependent.

Bibliography

Neudeck, G. W., & Malhotra, A. K. (1975). Theory and interpretation of the field-effect conductance experiment in amorphous silicon. Journal of Applied Physics, 46(6), 2662â2669.

Authors 2

G. W. Neudeck (first)
A. K. Malhotra (additional)

References 11 Referenced 38

10.1080/14786437008221061 / Philos. Mag. (1970)
10.1103/PhysRevLett.22.1065 / Phys. Rev. Lett. (1969)
10.1116/1.1316255 / J. Vac. Sci. Technol. (1971)
10.1016/0025-5408(70)90104-2 / Mater. Res. Bull. (1970)
10.1063/1.1653884 / Appl. Phys. Lett. (1971)
{'key': '2024020418310196900_r6', 'first-page': '229', 'volume': '13', 'year': '1973', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1973)
{'key': '2024020418310196900_r7', 'first-page': '727', 'volume': '8–10', 'year': '1972', 'journal-title': 'J. Non-Cryst. Solids'} / J. Non-Cryst. Solids (1972)
10.1063/1.1655052 / Appl. Phys. Lett. (1974)
10.1149/1.2402380 / J. Electrochem. Soc. (1974)
10.1063/1.321328 / J. Appl. Phys. (1975)
10.1080/14786437208223855 / Philos. Mag. (1972)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 3:50 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 1:31 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 9:22 a.m.)
Issued	50 years, 3 months ago (June 1, 1975)
Published	50 years, 3 months ago (June 1, 1975)
Published Print	50 years, 3 months ago (June 1, 1975)

Funders 0

None

BibTeX

@article{Neudeck_1975, title={Theory and interpretation of the field-effect conductance experiment in amorphous silicon}, volume={46}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.321900}, DOI={10.1063/1.321900}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Neudeck, G. W. and Malhotra, A. K.}, year={1975}, month=jun, pages={2662–2669} }

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