DOI: 10.1063/1.321738. Influence of AlxGa1−xAs layer thickness on threshold current density and differential quantum efficiency for GaAs−AlxGa1−xAs DH lasers

Influence of AlxGa1−xAs layer thickness on threshold current density and differential quantum efficiency for GaAs−AlxGa1−xAs DH lasers

10.1063/1.321738

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Measurements of the threshold current density Jth and differential quantum efficiency ηd havd been made on GaAs−Al0.3Ga0.7As double−heterostructure (DH) lasers to determine the effect of AlxGa1−xAs layer thickness on Jth and ηd. For DH lasers with active layer thicknesses near 0.12 μ, Jth increases and ηd decreases drastically for p−type Al0.3Ga0.7As layers less than ∼0.8 μ in thickness. This effect is also considered for other values of active layer thickness d, and AlAs mole fraction x.

Bibliography

Casey, H. C., & Panish, M. B. (1975). Influence of AlxGa1âxAs layer thickness on threshold current density and differential quantum efficiency for GaAsâAlxGa1âxAs DH lasers. Journal of Applied Physics, 46(3), 1393â1395.

Authors 2

H. C. Casey (first)
M. B. Panish (additional)

References 7 Referenced 20

10.1063/1.1661602 / J. Appl. Phys. (1972)
10.1063/1.1662178 / J. Appl. Phys. (1973)
10.1063/1.1655476 / Appl. Phys. Lett. (1974)
{'key': '2024020418155432700_r4'}
10.1063/1.1662980 / J. Appl. Phys. (1974)
10.1063/1.1663645 / J. Appl. Phys. (1974)
10.1063/1.1655095 / Appl. Phys. Lett. (1974)

Dates

Type	When
Created	22 years, 6 months ago (Feb. 14, 2003, 3:50 p.m.)
Deposited	1 year, 6 months ago (Feb. 4, 2024, 1:16 p.m.)
Indexed	1 year, 6 months ago (Feb. 5, 2024, 5:03 a.m.)
Issued	50 years, 6 months ago (March 1, 1975)
Published	50 years, 6 months ago (March 1, 1975)
Published Print	50 years, 6 months ago (March 1, 1975)

Funders 0

None

BibTeX

@article{Casey_1975, title={Influence of AlxGa1‚àíxAs layer thickness on threshold current density and differential quantum efficiency for GaAs‚àíAlxGa1‚àíxAs DH lasers}, volume={46}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.321738}, DOI={10.1063/1.321738}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Casey, H. C. and Panish, M. B.}, year={1975}, month=mar, pages={1393‚Äì1395} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        5
      ]
    ],
    "date-time": "2024-02-05T10:03:26Z",
    "timestamp": 1707127406220
  },
  "reference-count": 7,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1975,
        3,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Measurements of the threshold current density Jth and differential quantum efficiency \u03b7d havd been made on GaAs\u2212Al0.3Ga0.7As double\u2212heterostructure (DH) lasers to determine the effect of AlxGa1\u2212xAs layer thickness on Jth and \u03b7d. For DH lasers with active layer thicknesses near 0.12 \u03bc, Jth increases and \u03b7d decreases drastically for p\u2212type Al0.3Ga0.7As layers less than \u223c0.8 \u03bc in thickness. This effect is also considered for other values of active layer thickness d, and AlAs mole fraction x.</jats:p>",
  "DOI": "10.1063/1.321738",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2003,
        2,
        14
      ]
    ],
    "date-time": "2003-02-14T20:50:24Z",
    "timestamp": 1045255824000
  },
  "page": "1393-1395",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 20,
  "title": "Influence of Al<i>x</i>Ga1\u2212<i>x</i>As layer thickness on threshold current density and differential quantum efficiency for GaAs\u2212Al<i>x</i>Ga1\u2212<i>x</i>As DH lasers",
  "prefix": "10.1063",
  "volume": "46",
  "author": [
    {
      "suffix": "Jr.",
      "given": "H. C.",
      "family": "Casey",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    },
    {
      "given": "M. B.",
      "family": "Panish",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Murray Hill, New Jersey 07974"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020418155432700_r1",
      "doi-asserted-by": "crossref",
      "first-page": "2827",
      "DOI": "10.1063/1.1661602",
      "volume": "43",
      "year": "1972",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020418155432700_r2",
      "doi-asserted-by": "crossref",
      "first-page": "5470",
      "DOI": "10.1063/1.1662178",
      "volume": "44",
      "year": "1973",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020418155432700_r3",
      "doi-asserted-by": "crossref",
      "first-page": "288",
      "DOI": "10.1063/1.1655476",
      "volume": "25",
      "year": "1974",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020418155432700_r4"
    },
    {
      "key": "2024020418155432700_r5",
      "doi-asserted-by": "crossref",
      "first-page": "322",
      "DOI": "10.1063/1.1662980",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020418155432700_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2650",
      "DOI": "10.1063/1.1663645",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020418155432700_r7",
      "doi-asserted-by": "crossref",
      "first-page": "63",
      "DOI": "10.1063/1.1655095",
      "volume": "24",
      "year": "1974",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/46/3/1393/18369740/1393_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/46/3/1393/18369740/1393_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        4
      ]
    ],
    "date-time": "2024-02-04T18:16:02Z",
    "timestamp": 1707070562000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/46/3/1393/507055/Influence-of-AlxGa1-xAs-layer-thickness-on"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1975,
        3,
        1
      ]
    ]
  },
  "references-count": 7,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          1975,
          3,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.321738",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1975,
        3
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1975,
        3,
        1
      ]
    ]
  }
}