Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Recent work has been reported on metal−semiconductor (Schottky barrier) solar cells in which efficiencies comparable to silicon p−n devices have been achieved. In these devices, the interfacial layer is believed to play an important role. In this discussion the nature of that role is examined. It is shown that the interfacial layer can enhance performance, and an outline for optimizing that enhancement is presented. The results are presented assuming n−type semiconductor material; however, the conclusions are equally valid for structures using p−type material.

Bibliography

Fonash, S. J. (1975). The role of the interfacial layer in metal−semiconductor solar cells. Journal of Applied Physics, 46(3), 1286–1289.

Authors 1
  1. Stephen J. Fonash (first)
References 6 Referenced 125
  1. {'key': '2024020418160930000_r1'}
  2. 10.1063/1.1702952 / J. Appl. Phys. (1965)
  3. 10.1103/PhysRev.116.84 / Phys. Rev. (1959)
  4. 10.1016/0038-1101(72)90099-8 / Solid-State Electron. (1972)
  5. {'key': '2024020418160930000_r5'}
  6. 10.1088/0022-3727/4/10/319 / J. Phys. D (1971)
Dates
Type When
Created 22 years, 6 months ago (Feb. 14, 2003, 3:50 p.m.)
Deposited 1 year, 7 months ago (Feb. 4, 2024, 1:16 p.m.)
Indexed 1 year, 1 month ago (July 27, 2024, 9:54 a.m.)
Issued 50 years, 6 months ago (March 1, 1975)
Published 50 years, 6 months ago (March 1, 1975)
Published Print 50 years, 6 months ago (March 1, 1975)
Funders 0

None

@article{Fonash_1975, title={The role of the interfacial layer in metal−semiconductor solar cells}, volume={46}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.321694}, DOI={10.1063/1.321694}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Fonash, Stephen J.}, year={1975}, month=mar, pages={1286–1289} }