Abstract
The absorption coefficient α for GaAs at room temperature was determined in the spectral range from 1.3 to 1.6 eV by transmission measurements for 10⩽α⩽103 cm−1 and by a Kramers−Kronig analysis of the reflectance for α≳103 cm−1. Measurements were made on high−purity n−type samples, n−type samples with free−electron concentrations from 5×1016 to 6.7×1018 cm−3, p−type samples with free−hole concentrations from 1.5×1016 to 1.6×1019 cm−3, and p−type samples heavily doped with the amphoteric impurity Si. These data show that near the direct energy gap Eg the shape of the α−vs−photon−energy curve is strongly dependent on the impurity concentration.
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Dates
Type | When |
---|---|
Created | 22 years, 6 months ago (Feb. 14, 2003, 3:50 p.m.) |
Deposited | 1 year, 6 months ago (Feb. 4, 2024, 1:12 p.m.) |
Indexed | 3 weeks, 6 days ago (Aug. 5, 2025, 8:31 a.m.) |
Issued | 50 years, 8 months ago (Jan. 1, 1975) |
Published | 50 years, 8 months ago (Jan. 1, 1975) |
Published Print | 50 years, 8 months ago (Jan. 1, 1975) |
@article{Casey_1975, title={Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV}, volume={46}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.321330}, DOI={10.1063/1.321330}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Casey, H. C. and Sell, D. D. and Wecht, K. W.}, year={1975}, month=jan, pages={250–257} }