DOI: 10.1063/1.3206917. High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature

10.1063/1.3206917

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors report on the fabrication of low-driven-voltage and high mobility ZnO thin-film transistor with sputtering Ta2O5 film as the dielectric. The device shows a field effect mobility of 60.4 cm2/V s, a threshold voltage of 1.1 V, an on/off ratio of 1.22×107, and a subthreshold swing of 0.23 V/decade. The high mobility partially resulted from the fringing-electric-field effect due to the undefined active layer. Therefore, considering our device geometry, the actual mobility is about 40.5 cm2/V s. We contribute the high performance to the proper dielectric thickness, smooth insulator surface, and relatively low trap state densities in the insulator/channel interface.

Bibliography

Zhang, L., Li, J., Zhang, X. W., Jiang, X. Y., & Zhang, Z. L. (2009). High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature. Applied Physics Letters, 95(7).

Authors 5

L. Zhang (first)
J. Li (additional)
X. W. Zhang (additional)
X. Y. Jiang (additional)
Z. L. Zhang (additional)

References 18 Referenced 131

10.1063/1.1542677 / Appl. Phys. Lett. (2003)
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10.1063/1.1553997 / Appl. Phys. Lett. (2003)
10.1126/science.1083212 / Science (2003)
10.1063/1.1790587 / Appl. Phys. Lett. (2004)
10.1063/1.2748863 / J. Appl. Phys. (2007)
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10.1116/1.1949220 / J. Vac. Sci. Technol. B (2005)
10.1103/PhysRevB.66.195336 / Phys. Rev. B (2002)
10.1063/1.1541112 / Appl. Phys. Lett. (2003)
10.1063/1.1571960 / Appl. Phys. Lett. (2003)
10.1016/j.tsf.2007.03.125 / Thin Solid Films (2007)

Dates

Type	When
Created	16 years ago (Aug. 25, 2009, 10:30 a.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 8:02 p.m.)
Indexed	1 month ago (July 30, 2025, 6:53 a.m.)
Issued	16 years ago (Aug. 17, 2009)
Published	16 years ago (Aug. 17, 2009)
Published Online	16 years ago (Aug. 21, 2009)
Published Print	16 years ago (Aug. 17, 2009)

Funders 0

None

BibTeX

@article{Zhang_2009, title={High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3206917}, DOI={10.1063/1.3206917}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, L. and Li, J. and Zhang, X. W. and Jiang, X. Y. and Zhang, Z. L.}, year={2009}, month=aug }

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