DOI: 10.1063/1.3200237. Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3

Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3

10.1063/1.3200237

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomically smooth, single crystalline Bi2Se3 thin films were prepared on Si(111) by molecular beam epitaxy. Scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron emission spectroscopy, and Raman spectroscopy were used to characterize the stoichiometry and crystallinity of the film. The films grow in a self-organized quintuple layer by quintuple-layer mode, and atomically smooth films can be obtained, with controllable thickness down to one quintuple layer (∼1 nm).

Bibliography

Zhang, G., Qin, H., Teng, J., Guo, J., Guo, Q., Dai, X., Fang, Z., & Wu, K. (2009). Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3. Applied Physics Letters, 95(5).

Authors 8

Guanhua Zhang (first)
Huajun Qin (additional)
Jing Teng (additional)
Jiandong Guo (additional)
Qinlin Guo (additional)
Xi Dai (additional)
Zhong Fang (additional)
Kehui Wu (additional)

References 28 Referenced 313

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Dates

Type	When
Created	16 years ago (Aug. 10, 2009, 11:44 a.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 7:09 p.m.)
Indexed	2 weeks, 6 days ago (Aug. 6, 2025, 9:19 a.m.)
Issued	16 years ago (Aug. 3, 2009)
Published	16 years ago (Aug. 3, 2009)
Published Online	16 years ago (Aug. 6, 2009)
Published Print	16 years ago (Aug. 3, 2009)

Funders 0

None

BibTeX

@article{Zhang_2009, title={Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3200237}, DOI={10.1063/1.3200237}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Zhang, Guanhua and Qin, Huajun and Teng, Jing and Guo, Jiandong and Guo, Qinlin and Dai, Xi and Fang, Zhong and Wu, Kehui}, year={2009}, month=aug }

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