DOI: 10.1063/1.3184584. Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field

10.1063/1.3184584

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomic migration under an electric field, electromigration, in molten and crystalline Ge2Sb2Te5 was studied using a pulsed dc stress to an isolated line structure. Under a single pulse (∼10−3 s), Ge2Sb2Te5 was melted by Joule heating, and an electrostatic force-induced drift of Ge and Sb toward the cathode and Te toward the anode was observed. Effective charge numbers were calculated to be 0.28, 0.38, and −0.29 for Ge, Sb, and Te, respectively. Electromigration in the crystalline state was studied by applying a 10 MHz pulsed dc; constituent elements migrated toward the cathode, which suggests a hole wind-force operating in this phase.

Bibliography

Yang, T.-Y., Park, I.-M., Kim, B.-J., & Joo, Y.-C. (2009). Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field. Applied Physics Letters, 95(3).

Authors 4

Tae-Youl Yang (first)
Il-Mok Park (additional)
Byoung-Joon Kim (additional)
Young-Chang Joo (additional)

References 11 Referenced 92

10.1149/1.2409482 / J. Electrochem. Soc. (2007)
10.1149/1.2164768 / J. Electrochem. Soc. (2006)
10.1016/j.apsusc.2007.07.098 / Appl. Surf. Sci. (2007)
10.1149/1.3079480 / Electrochem. Solid-State Lett. (2009)
10.1149/1.3137056 / J. Electrochem. Soc. (2009)
10.1016/0022-3697(61)90138-X / J. Phys. Chem. Solids (1961)
10.1063/1.2210262 / J. Appl. Phys. (2006)
10.1021/ic00277a030 / Inorg. Chem. (1988)
10.1088/0953-8984/20/20/205102 / J. Phys.: Condens. Matter (2008)
10.1063/1.91526 / Appl. Phys. Lett. (1980)
10.1103/PhysRevB.73.045210 / Phys. Rev. B (2006)

Dates

Type	When
Created	16 years, 1 month ago (July 20, 2009, 8:10 p.m.)
Deposited	2 years, 1 month ago (June 24, 2023, 10:13 p.m.)
Indexed	2 days, 17 hours ago (Aug. 19, 2025, 7:12 a.m.)
Issued	16 years, 1 month ago (July 20, 2009)
Published	16 years, 1 month ago (July 20, 2009)
Published Online	16 years, 1 month ago (July 20, 2009)
Published Print	16 years, 1 month ago (July 20, 2009)

Funders 0

None

BibTeX

@article{Yang_2009, title={Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field}, volume={95}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3184584}, DOI={10.1063/1.3184584}, number={3}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yang, Tae-Youl and Park, Il-Mok and Kim, Byoung-Joon and Joo, Young-Chang}, year={2009}, month=jul }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        19
      ]
    ],
    "date-time": "2025-08-19T11:12:01Z",
    "timestamp": 1755601921523,
    "version": "3.41.2"
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "3",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2009,
        7,
        20
      ]
    ]
  },
  "abstract": "<jats:p>Atomic migration under an electric field, electromigration, in molten and crystalline Ge2Sb2Te5 was studied using a pulsed dc stress to an isolated line structure. Under a single pulse (\u223c10\u22123\u2002s), Ge2Sb2Te5 was melted by Joule heating, and an electrostatic force-induced drift of Ge and Sb toward the cathode and Te toward the anode was observed. Effective charge numbers were calculated to be 0.28, 0.38, and \u22120.29 for Ge, Sb, and Te, respectively. Electromigration in the crystalline state was studied by applying a 10 MHz pulsed dc; constituent elements migrated toward the cathode, which suggests a hole wind-force operating in this phase.</jats:p>",
  "DOI": "10.1063/1.3184584",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2009,
        7,
        21
      ]
    ],
    "date-time": "2009-07-21T00:10:09Z",
    "timestamp": 1248135009000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 92,
  "title": "Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field",
  "prefix": "10.1063",
  "volume": "95",
  "author": [
    {
      "given": "Tae-Youl",
      "family": "Yang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Seoul National University Department of Materials Science and Engineering, , Seoul 151-744, Republic of Korea"
        }
      ]
    },
    {
      "given": "Il-Mok",
      "family": "Park",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Seoul National University Department of Materials Science and Engineering, , Seoul 151-744, Republic of Korea"
        }
      ]
    },
    {
      "given": "Byoung-Joon",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Seoul National University Department of Materials Science and Engineering, , Seoul 151-744, Republic of Korea"
        }
      ]
    },
    {
      "given": "Young-Chang",
      "family": "Joo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Seoul National University Department of Materials Science and Engineering, , Seoul 151-744, Republic of Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2009,
        7,
        20
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062414495190700_c1",
      "doi-asserted-by": "publisher",
      "first-page": "H139",
      "DOI": "10.1149/1.2409482",
      "volume": "154",
      "year": "2007",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062414495190700_c2",
      "doi-asserted-by": "publisher",
      "first-page": "G234",
      "DOI": "10.1149/1.2164768",
      "volume": "153",
      "year": "2006",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062414495190700_c3",
      "doi-asserted-by": "publisher",
      "first-page": "316",
      "DOI": "10.1016/j.apsusc.2007.07.098",
      "volume": "254",
      "year": "2007",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023062414495190700_c4",
      "doi-asserted-by": "publisher",
      "first-page": "H155",
      "DOI": "10.1149/1.3079480",
      "volume": "12",
      "year": "2009",
      "journal-title": "Electrochem. Solid-State Lett."
    },
    {
      "key": "2023062414495190700_c5",
      "doi-asserted-by": "publisher",
      "first-page": "H617",
      "DOI": "10.1149/1.3137056",
      "volume": "156",
      "year": "2009",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023062414495190700_c6",
      "doi-asserted-by": "publisher",
      "first-page": "76",
      "DOI": "10.1016/0022-3697(61)90138-X",
      "volume": "20",
      "year": "1961",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2023062414495190700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "033715",
      "DOI": "10.1063/1.2210262",
      "volume": "100",
      "year": "2006",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023062414495190700_c8",
      "doi-asserted-by": "publisher",
      "first-page": "734",
      "DOI": "10.1021/ic00277a030",
      "volume": "27",
      "year": "1988",
      "journal-title": "Inorg. Chem."
    },
    {
      "key": "2023062414495190700_c9",
      "doi-asserted-by": "publisher",
      "first-page": "205102",
      "DOI": "10.1088/0953-8984/20/20/205102",
      "volume": "20",
      "year": "2008",
      "journal-title": "J. Phys.: Condens. Matter"
    },
    {
      "key": "2023062414495190700_c10",
      "doi-asserted-by": "publisher",
      "first-page": "428",
      "DOI": "10.1063/1.91526",
      "volume": "36",
      "year": "1980",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062414495190700_c11",
      "doi-asserted-by": "publisher",
      "first-page": "045210",
      "DOI": "10.1103/PhysRevB.73.045210",
      "volume": "73",
      "year": "2006",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3184584/14415591/032104_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3184584/14415591/032104_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        25
      ]
    ],
    "date-time": "2023-06-25T02:13:35Z",
    "timestamp": 1687659215000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/95/3/032104/131934/Atomic-migration-in-molten-and-crystalline"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2009,
        7,
        20
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "3",
    "published-print": {
      "date-parts": [
        [
          2009,
          7,
          20
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3184584",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2009,
        7,
        20
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2009,
        7,
        20
      ]
    ]
  },
  "article-number": "032104"
}