DOI: 10.1063/1.3155434. Doping-dependent nanofaceting on silicon nanowire surfaces

Doping-dependent nanofaceting on silicon nanowire surfaces

10.1063/1.3155434

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silicon nanowires with axially varying n- and p-doping were grown by the vapor-liquid-solid approach using gold as the catalyst. The nanowire sidewalls exhibit periodic nanofaceting, which is found to be dopant-dependent. It is shown that the nanofaceting occurs during the enhanced sidewall growth that arises when the diborane dopant gas is introduced. The nanowires are axially oriented along ⟨111⟩, and the crystallographic planes on which the nanofaceting occurs are determined to be {111} and {100}.

Bibliography

Li, F., Nellist, P. D., & Cockayne, D. J. H. (2009). Doping-dependent nanofaceting on silicon nanowire surfaces. Applied Physics Letters, 94(26).

Authors 3

Fang Li (first)
Peter D. Nellist (additional)
David J. H. Cockayne (additional)

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Dates

Type	When
Created	16 years, 2 months ago (July 2, 2009, 6:20 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 7:56 p.m.)
Indexed	1 month ago (July 30, 2025, 6:53 a.m.)
Issued	16 years, 2 months ago (June 29, 2009)
Published	16 years, 2 months ago (June 29, 2009)
Published Online	16 years, 2 months ago (July 1, 2009)
Published Print	16 years, 2 months ago (June 29, 2009)

Funders 0

None

BibTeX

@article{Li_2009, title={Doping-dependent nanofaceting on silicon nanowire surfaces}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3155434}, DOI={10.1063/1.3155434}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Li, Fang and Nellist, Peter D. and Cockayne, David J. H.}, year={2009}, month=jun }

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