DOI: 10.1063/1.3148342. Integrated complementary graphene inverter

Integrated complementary graphene inverter

10.1063/1.3148342

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. Both transistors initially exhibited p-type behavior at low gate voltages, since air contamination shifted their Dirac points from zero to a positive gate voltage. Contaminants in one transistor were removed by electrical annealing, which shifted its Dirac point back and therefore restored n-type behavior. Boolean inversion is obtained by operating the transistors between their Dirac points. The fabricated inverter represents an important step toward the development of digital integrated circuits on graphene.

Bibliography

Traversi, F., Russo, V., & Sordan, R. (2009). Integrated complementary graphene inverter. Applied Physics Letters, 94(22).

Authors 3

Floriano Traversi (first)
Valeria Russo (additional)
Roman Sordan (additional)

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Dates

Type	When
Created	16 years, 2 months ago (June 8, 2009, 10:51 a.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 5:52 p.m.)
Indexed	1 month, 1 week ago (July 30, 2025, 6:52 a.m.)
Issued	16 years, 3 months ago (June 1, 2009)
Published	16 years, 3 months ago (June 1, 2009)
Published Online	16 years, 3 months ago (June 5, 2009)
Published Print	16 years, 3 months ago (June 1, 2009)

Funders 0

None

BibTeX

@article{Traversi_2009, title={Integrated complementary graphene inverter}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3148342}, DOI={10.1063/1.3148342}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Traversi, Floriano and Russo, Valeria and Sordan, Roman}, year={2009}, month=jun }

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