Abstract
A series of superlatticelike (SLL) structure incorporated with two phase-change materials GeTe and Sb7Te3 was applied in lateral phase change memory. Power consumption and lifetime were used as two criteria to optimize the SLL structure. It was found that with the thickness ratio of GeTe to Sb7Te3 at 1.6, the RESET current could be as low as 1.5 mA and the endurance could reach as high as 5.3×106 cycles. By varying the thickness ratio of GeTe to Sb7Te3, the crystallization temperature of SLL structures and the performance of lateral phase change memory with these SLL structures can be controlled.
References
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Dates
Type | When |
---|---|
Created | 16 years, 2 months ago (May 22, 2009, 6:36 p.m.) |
Deposited | 2 years, 1 month ago (June 23, 2023, 11:51 p.m.) |
Indexed | 3 weeks, 1 day ago (July 30, 2025, 6:53 a.m.) |
Issued | 16 years, 3 months ago (May 18, 2009) |
Published | 16 years, 3 months ago (May 18, 2009) |
Published Online | 16 years, 3 months ago (May 22, 2009) |
Published Print | 16 years, 3 months ago (May 18, 2009) |
@article{Yang_2009, title={GeTe / Sb 7 Te 3 superlatticelike structure for lateral phase change memory}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3139776}, DOI={10.1063/1.3139776}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yang, Hongxin and Chong, Chong Tow and Zhao, Rong and Lee, Hock Koon and Li, Jianming and Lim, Kian Guan and Shi, Luping}, year={2009}, month=may }