Abstract
In this paper, we present the design, fabrication, and characterization of wire grid polarizers. These polarizers show high extinction ratios and high transmission with structure dimensions that are compatible with current complementary metal-oxide-semiconductor (CMOS) technology. To design these wire grids, we first analyze the transmission properties of single apertures. From the understanding of a single aperture, we apply a modal expansion method to model wire grids. The most promising grids are fabricated on both a glass substrate and CMOS photodiode. An extinction ratio higher than 200 is measured.
References
22
Referenced
54
10.1109/64.464928
/ IEEE Expert (1995)10.1364/AO.45.001142
/ Appl. Opt. (2006)10.1117/1.601452
/ Opt. Eng. (Bellingham) (1997)10.1364/JOSAA.16.001168
/ J. Opt. Soc. Am. A Opt. Image Sci. Vis (1999)10.1093/ietele/e90-c.5.1046
/ IEICE Trans. Electron. (2007){'volume-title': 'Optics', 'year': '1998', 'first-page': '319', 'key': '2023070222063940900_c6'}
/ Optics (1998){'key': '2023070222063940900_c7', 'first-page': '769', 'volume': '36', 'year': '1889', 'journal-title': 'Ann. Phys. Chem.'}
/ Ann. Phys. Chem. (1889)10.1364/JOSA.50.000886
/ J. Opt. Soc. Am. (1960)10.1364/AO.6.001023
/ Appl. Opt. (1967)10.1088/0957-4484/16/9/076
/ Nanotechnology (2005)10.1364/OL.22.000419
/ Opt. Lett. (1997)10.1103/PhysRevLett.86.5601
/ Phys. Rev. Lett. (2001)10.1038/nature05350
/ Nature (London) (2007)10.1016/j.optcom.2007.07.063
/ Opt. Commun. (2007)10.1109/TSM.2005.845037
/ IEEE Trans. Semicond. Manuf. (2005)10.1364/AO.32.003459
/ Appl. Opt. (1993){'key': '2023070222063940900_c17'}
10.1103/PhysRevLett.88.057403
/ Phys. Rev. Lett. (2002)10.1364/OPEX.13.007760
/ Opt. Express (2005)10.1088/1478-7814/18/1/325
/ Proc. Phys. Soc. London (1902)10.1109/JSSC.2003.819169
/ IEEE J. Solid-State Circuits (2003)10.1016/S0168-9002(03)00792-7
/ Nucl. Instrum. Methods Phys. Res. A (2003)
Dates
Type | When |
---|---|
Created | 16 years, 3 months ago (May 12, 2009, 6:23 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 6:06 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:53 a.m.) |
Issued | 16 years, 3 months ago (May 11, 2009) |
Published | 16 years, 3 months ago (May 11, 2009) |
Published Online | 16 years, 3 months ago (May 12, 2009) |
Published Print | 16 years, 3 months ago (May 11, 2009) |
@article{Guillaum_e_2009, title={Polarization sensitive silicon photodiodes using nanostructured metallic grids}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3133862}, DOI={10.1063/1.3133862}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Guillaumée, M. and Dunbar, L. A. and Santschi, Ch. and Grenet, E. and Eckert, R. and Martin, O. J. F. and Stanley, R. P.}, year={2009}, month=may }