DOI: 10.1063/1.3126501. Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

Crystallization dynamics of nitrogen-doped Ge2Sb2Te5

10.1063/1.3126501

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The crystallization of amorphous Ge2Sb2Te5 (GST) doped with nitrogen is studied with pulsed laser heating. The crystallization time of sputter-deposited films is increased by doping by as much as 100× for nitrogen concentrations of the order of 12 at. % in as-deposited amorphous films. Suppression of the formation of critical crystal nuclei is found to be responsible. The crystallization of melt-quenched amorphous material is also slowed by doping but less dramatically.

Bibliography

Shelby, R. M., & Raoux, S. (2009). Crystallization dynamics of nitrogen-doped Ge2Sb2Te5. Journal of Applied Physics, 105(10).

Authors 2

Robert M. Shelby (first)
Simone Raoux (additional)

References 24 Referenced 101

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Dates

Type	When
Created	16 years, 2 months ago (May 22, 2009, 4:10 a.m.)
Deposited	2 years ago (July 29, 2023, 1:31 a.m.)
Indexed	3 weeks ago (July 30, 2025, 6:53 a.m.)
Issued	16 years, 3 months ago (May 15, 2009)
Published	16 years, 3 months ago (May 15, 2009)
Published Online	16 years, 3 months ago (May 20, 2009)
Published Print	16 years, 3 months ago (May 15, 2009)

Funders 0

None

BibTeX

@article{Shelby_2009, title={Crystallization dynamics of nitrogen-doped Ge2Sb2Te5}, volume={105}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3126501}, DOI={10.1063/1.3126501}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Shelby, Robert M. and Raoux, Simone}, year={2009}, month=may }

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