Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Experimental data on the migration of Cu impurities in TiN and in similar diffusion-barriers used in electronic devices have led to conflicting suggestions about the underlying physical mechanisms. Here we use results of first-principles calculations, which are in agreement with measured activations energies, to elucidate the atomic-scale processes of moderate and rapid diffusion of Cu through the bulk and intergrain voids of TiN films, respectively. We also find that O and H impurities are fast diffusers in TiN. The results offer an assessment for the efficiency of TiN diffusion-barriers with respect to properties, such as nature of impurities, stoichiometry, and crystallinity.

Bibliography

Tsetseris, L., Logothetidis, S., & Pantelides, S. T. (2009). Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN. Applied Physics Letters, 94(16).

Authors 3
  1. L. Tsetseris (first)
  2. S. Logothetidis (additional)
  3. S. T. Pantelides (additional)
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Dates
Type When
Created 16 years, 4 months ago (April 21, 2009, 11:23 a.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 10:44 a.m.)
Indexed 4 weeks, 2 days ago (July 30, 2025, 6:53 a.m.)
Issued 16 years, 4 months ago (April 20, 2009)
Published 16 years, 4 months ago (April 20, 2009)
Published Online 16 years, 4 months ago (April 20, 2009)
Published Print 16 years, 4 months ago (April 20, 2009)
Funders 0

None

@article{Tsetseris_2009, title={Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3122344}, DOI={10.1063/1.3122344}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsetseris, L. and Logothetidis, S. and Pantelides, S. T.}, year={2009}, month=apr }