Abstract
Experimental data on the migration of Cu impurities in TiN and in similar diffusion-barriers used in electronic devices have led to conflicting suggestions about the underlying physical mechanisms. Here we use results of first-principles calculations, which are in agreement with measured activations energies, to elucidate the atomic-scale processes of moderate and rapid diffusion of Cu through the bulk and intergrain voids of TiN films, respectively. We also find that O and H impurities are fast diffusers in TiN. The results offer an assessment for the efficiency of TiN diffusion-barriers with respect to properties, such as nature of impurities, stoichiometry, and crystallinity.
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Dates
Type | When |
---|---|
Created | 16 years, 4 months ago (April 21, 2009, 11:23 a.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 10:44 a.m.) |
Indexed | 4 weeks, 2 days ago (July 30, 2025, 6:53 a.m.) |
Issued | 16 years, 4 months ago (April 20, 2009) |
Published | 16 years, 4 months ago (April 20, 2009) |
Published Online | 16 years, 4 months ago (April 20, 2009) |
Published Print | 16 years, 4 months ago (April 20, 2009) |
@article{Tsetseris_2009, title={Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3122344}, DOI={10.1063/1.3122344}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tsetseris, L. and Logothetidis, S. and Pantelides, S. T.}, year={2009}, month=apr }