DOI: 10.1063/1.3109063. A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5

10.1063/1.3109063

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The time-stability of the electrical characteristics of chalcogenide materials is one of the most important issues for their use in nonvolatile solid state memory applications. In particular the electrical conduction of the glassy phase evolves with time due to two different physical phenomena: the crystallization and the so-called low conductivity drift. Despite the physics of crystallization having been extensively studied in literature, the latter is mainly described by phenomenological relationships, and its physical comprehension is still under discussion. In this paper we study the amorphous phase low-field conductivity drift and its dependence on the temperature experienced by the device. We developed an experimental procedure able to separate the reversible change in the electrical conductivity with temperature due to the material semiconductorlike behavior from the nonreversible one related to the drift mechanism. A drift model explaining such nonreversible conductivity change as a band diagram modification is also provided and calibrated on experimental data. The present work finally introduces alternative metrics for drift quantification that can be useful in order to compare different materials.

Bibliography

Boniardi, M., Redaelli, A., Pirovano, A., Tortorelli, I., Ielmini, D., & Pellizzer, F. (2009). A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5. Journal of Applied Physics, 105(8).

Authors 6

M. Boniardi (first)
A. Redaelli (additional)
A. Pirovano (additional)
I. Tortorelli (additional)
D. Ielmini (additional)
F. Pellizzer (additional)

References 16 Referenced 77

10.1103/PhysRevLett.21.1450 / Phys. Rev. Lett. (1968)
{'volume': '2005', 'journal-title': 'Tech. Dig. – Int. Electron Devices Meet.', 'first-page': '742', 'key': '2023080207442996900_c2'} / Tech. Dig. – Int. Electron Devices Meet.
10.1109/LED.2007.910749 / IEEE Electron Device Lett. (2008)
10.1063/1.2931951 / J. Appl. Phys. (2008)
10.1109/TED.2004.825805 / IEEE Trans. Electron Devices (2004)
{'volume': '2007', 'journal-title': 'Tech. Dig. – Int. Electron Devices Meet.', 'first-page': '939', 'key': '2023080207442996900_c6'} / Tech. Dig. – Int. Electron Devices Meet.
10.1063/1.2825650 / J. Appl. Phys. (2007)
{'volume-title': 'Electronic Processes in Non-Crystalline Materials', 'year': '1967', 'key': '2023080207442996900_c8'} / Electronic Processes in Non-Crystalline Materials (1967)
10.1103/PhysRevLett.37.1504 / Phys. Rev. Lett. (1976)
10.1109/T-ED.1973.17617 / IEEE Trans. Electron Devices (1973)
{'volume': '2006', 'journal-title': 'Tech. Dig. – Int. Electron Devices Meet.', 'first-page': '401', 'key': '2023080207442996900_c11'} / Tech. Dig. – Int. Electron Devices Meet.
{'volume': '2004', 'journal-title': 'Dig. Tech. Pap. – Symp. VLSI Technol.', 'first-page': '18', 'key': '2023080207442996900_c12'} / Dig. Tech. Pap. – Symp. VLSI Technol.
{'volume': '2006', 'journal-title': 'Dig. Tech. Pap. – Symp. VLSI Technol.', 'first-page': '122', 'key': '2023080207442996900_c13'} / Dig. Tech. Pap. – Symp. VLSI Technol.
10.1109/TED.2003.823243 / IEEE Trans. Electron Devices (2004)
10.1109/TED.2006.888752 / IEEE Trans. Electron Devices (2007)
10.1109/LED.2005.857719 / IEEE Electron Device Lett. (2005)

Dates

Type	When
Created	16 years, 4 months ago (April 22, 2009, 6:28 p.m.)
Deposited	2 years ago (Aug. 2, 2023, 3:44 a.m.)
Indexed	3 weeks, 2 days ago (July 30, 2025, 6:53 a.m.)
Issued	16 years, 4 months ago (April 15, 2009)
Published	16 years, 4 months ago (April 15, 2009)
Published Online	16 years, 4 months ago (April 21, 2009)
Published Print	16 years, 4 months ago (April 15, 2009)

Funders 0

None

BibTeX

@article{Boniardi_2009, title={A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5}, volume={105}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3109063}, DOI={10.1063/1.3109063}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Boniardi, M. and Redaelli, A. and Pirovano, A. and Tortorelli, I. and Ielmini, D. and Pellizzer, F.}, year={2009}, month=apr }

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