DOI: 10.1063/1.3104853. Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

10.1063/1.3104853

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The wurtzite GaAs nanowires exhibit a photoluminescence emission peak at 1.544 eV, 29 meV higher than the zinc blende GaAs free exciton energy. Temperature dependent photoluminescence measurements (4.4–70 K) show indications of defect and impurity related emissions at lower energies (1.53–1.54 eV) and the presence of nonradiative defects. High resolution transmission electron microscopy images show a low density of short zinc blende segments sandwiched in between a dominating wurtzite structure and weak photoluminescence emission related to such zinc blende segments is also observed.

Bibliography

Hoang, T. B., Moses, A. F., Zhou, H. L., Dheeraj, D. L., Fimland, B. O., & Weman, H. (2009). Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires. Applied Physics Letters, 94(13).

Authors 6

Thang B. Hoang (first)
A. F. Moses (additional)
H. L. Zhou (additional)
D. L. Dheeraj (additional)
B. O. Fimland (additional)
H. Weman (additional)

References 13 Referenced 115

10.1103/PhysRevLett.99.146101 / Phys. Rev. Lett. (2007)
10.1103/PhysRevLett.95.215505 / Phys. Rev. Lett. (2005)
10.1063/1.2828034 / Appl. Phys. Lett. (2007)
10.1103/PhysRevB.49.4710 / Phys. Rev. B (1994)
10.1038/nnano.2008.359 / Nat. Nanotechnol. (2009)
10.1021/nl802406d / Nano Lett. (2008)
10.1088/0957-4484/18/12/125603 / Nanotechnology (2007)
10.1063/1.2949315 / Appl. Phys. Lett. (2008)
10.1103/PhysRevB.46.10086 / Phys. Rev. B (1992)
10.1063/1.2364885 / Appl. Phys. Lett. (2006)
10.1063/1.363937 / J. Appl. Phys. (1997)
10.1103/PhysRevLett.92.196403 / Phys. Rev. Lett. (2004)
10.1002/pssb.2221470148 / Phys. Status Solidi B (1988)

Dates

Type	When
Created	16 years, 4 months ago (April 2, 2009, 6:19 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 11:26 p.m.)
Indexed	3 weeks, 5 days ago (July 30, 2025, 6:52 a.m.)
Issued	16 years, 4 months ago (March 30, 2009)
Published	16 years, 4 months ago (March 30, 2009)
Published Online	16 years, 4 months ago (April 1, 2009)
Published Print	16 years, 4 months ago (March 30, 2009)

Funders 0

None

BibTeX

@article{Hoang_2009, title={Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3104853}, DOI={10.1063/1.3104853}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoang, Thang B. and Moses, A. F. and Zhou, H. L. and Dheeraj, D. L. and Fimland, B. O. and Weman, H.}, year={2009}, month=mar }

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