DOI: 10.1063/1.3087703. Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures

10.1063/1.3087703

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We apply a three-dimensional (3D) semiclassical ensemble Monte Carlo simulation method to study T-branch junctions based on InGaAs/InAlAs heterostructures and obtain an accurate insight into the physics behind the operation of such structures. Electron transport in these devices is investigated and their rectifying behavior is demonstrated at 77 and 300 K and for different branch sizes. Detailed device analysis is performed to establish the relationship between the extent of ballistic transport and the rectifying behavior of the junctions and show the influence of surface charge effects, which are carefully included in the model. Results from the simulation of a T-branch junction with a Schottky gate terminal are presented, demonstrating the necessity of using 3D simulation models to study the physics of semiconductor junctions.

Bibliography

Sadi, T., Dessenne, F., & Thobel, J.-L. (2009). Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures. Journal of Applied Physics, 105(5).

Authors 3

Toufik Sadi (first)
François Dessenne (additional)
Jean-Luc Thobel (additional)

References 21 Referenced 24

10.1002/pssc.200776512 / Phys. Status Solidi C (2008)
10.1016/j.tsf.2006.07.178 / Thin Solid Films (2007)
10.1109/TNANO.2006.885030 / IEEE Trans. Nanotechnol. (2006)
10.1063/1.2344849 / Appl. Phys. Lett. (2006)
{'year': '2004', 'key': '2023080305375677100_c5', 'first-page': '378'} (2004)
10.1088/0957-4484/14/2/303 / Nanotechnology (2003)
10.1209/epl/i1998-00562-1 / Europhys. Lett. (1998)
10.1103/PhysRevLett.80.3831 / Phys. Rev. Lett. (1998)
10.1143/JJAP.40.L909 / Jpn. J. Appl. Phys., Part 2 (2001)
10.1063/1.1396626 / Appl. Phys. Lett. (2001)
10.1063/1.1447316 / Appl. Phys. Lett. (2002)
10.1109/LED.2004.824841 / IEEE Electron Device Lett. (2004)
10.1088/0953-8984/17/29/R01 / J. Phys.: Condens. Matter (2005)
{'volume-title': 'The Monte Carlo Method for Semiconductor Simulation', 'year': '1989', 'key': '2023080305375677100_c14'} / The Monte Carlo Method for Semiconductor Simulation (1989)
10.1109/TED.2006.877698 / IEEE Trans. Electron Devices (2006)
10.1109/LED.2007.903920 / IEEE Electron Device Lett. (2007)
{'volume-title': 'Physics of Semiconductor Devices', 'year': '1969', 'key': '2023080305375677100_c17'} / Physics of Semiconductor Devices (1969)
10.1088/0268-1242/22/6/014 / Semicond. Sci. Technol. (2007)
10.1063/1.1852711 / Appl. Phys. Lett. (2005)
10.1063/1.1931051 / Appl. Phys. Lett. (2005)
10.1109/TED.2003.815858 / IEEE Trans. Electron Devices (2003)

Dates

Type	When
Created	16 years, 5 months ago (March 5, 2009, 9:30 p.m.)
Deposited	2 years, 1 month ago (Aug. 3, 2023, 1:38 a.m.)
Indexed	1 month ago (July 30, 2025, 6:52 a.m.)
Issued	16 years, 6 months ago (March 1, 2009)
Published	16 years, 6 months ago (March 1, 2009)
Published Online	16 years, 5 months ago (March 5, 2009)
Published Print	16 years, 6 months ago (March 1, 2009)

Funders 0

None

BibTeX

@article{Sadi_2009, title={Three-dimensional Monte Carlo study of three-terminal junctions based on InGaAs/InAlAs heterostructures}, volume={105}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3087703}, DOI={10.1063/1.3087703}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Sadi, Toufik and Dessenne, François and Thobel, Jean-Luc}, year={2009}, month=mar }

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