DOI: 10.1063/1.3072615. Epitaxy of Ge–Sb–Te phase-change memory alloys

Epitaxy of Ge–Sb–Te phase-change memory alloys

10.1063/1.3072615

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors demonstrate the epitaxy of Ge–Sb–Te alloys close to the Ge2Sb2Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 °C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 °C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

Bibliography

Braun, W., Shayduk, R., Flissikowski, T., Ramsteiner, M., Grahn, H. T., Riechert, H., Fons, P., & Kolobov, A. (2009). Epitaxy of GeâSbâTe phase-change memory alloys. Applied Physics Letters, 94(4).

Authors 8

Wolfgang Braun (first)
Roman Shayduk (additional)
Timur Flissikowski (additional)
Manfred Ramsteiner (additional)
Holger T. Grahn (additional)
Henning Riechert (additional)
Paul Fons (additional)
Alex Kolobov (additional)

References 13 Referenced 32

10.1038/nmat1359 / Nature Mater. (2005)
10.1063/1.1314323 / J. Appl. Phys. (2000)
10.1038/nmat1215 / Nature Mater. (2004)
10.1063/1.1535237 / Rev. Sci. Instrum. (2003)
10.1016/S0022-0248(01)02392-2 / J. Cryst. Growth (2002)
10.1103/PhysRevB.62.1615 / Phys. Rev. B (2000)
10.1116/1.589976 / J. Vac. Sci. Technol. B (1998)
10.1143/JJAP.41.1674 / Jpn. J. Appl. Phys., Part 1 (2002)
10.1107/S0108768104022906 / Acta Crystallogr., Sect. B: Struct. Sci. (2004)
10.1103/PhysRevB.69.104111 / Phys. Rev. B (2004)
10.1016/j.jpcs.2007.02.027 / J. Phys. Chem. Solids (2007)
10.1016/S0022-3697(98)00050-X / J. Phys. Chem. Solids (1998)
10.1063/1.1884248 / J. Appl. Phys. (2005)

Dates

Type	When
Created	16 years, 7 months ago (Jan. 26, 2009, 7 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 6:39 p.m.)
Indexed	4 weeks ago (July 30, 2025, 6:52 a.m.)
Issued	16 years, 7 months ago (Jan. 26, 2009)
Published	16 years, 7 months ago (Jan. 26, 2009)
Published Online	16 years, 7 months ago (Jan. 26, 2009)
Published Print	16 years, 7 months ago (Jan. 26, 2009)

Funders 0

None

BibTeX

@article{Braun_2009, title={Epitaxy of Ge–Sb–Te phase-change memory alloys}, volume={94}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3072615}, DOI={10.1063/1.3072615}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Braun, Wolfgang and Shayduk, Roman and Flissikowski, Timur and Ramsteiner, Manfred and Grahn, Holger T. and Riechert, Henning and Fons, Paul and Kolobov, Alex}, year={2009}, month=jan }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:52:37Z",
    "timestamp": 1753872757800,
    "version": "3.41.2"
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2009,
        1,
        26
      ]
    ]
  },
  "abstract": "<jats:p>The authors demonstrate the epitaxy of Ge\u2013Sb\u2013Te alloys close to the Ge2Sb2Te5 composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120\u2009\u00b0C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180\u2009\u00b0C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.</jats:p>",
  "DOI": "10.1063/1.3072615",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2009,
        1,
        27
      ]
    ],
    "date-time": "2009-01-27T00:00:32Z",
    "timestamp": 1233014432000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 32,
  "title": "Epitaxy of Ge\u2013Sb\u2013Te phase-change memory alloys",
  "prefix": "10.1063",
  "volume": "94",
  "author": [
    {
      "given": "Wolfgang",
      "family": "Braun",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Paul Drude Institute for Solid State Electronics 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Roman",
      "family": "Shayduk",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Paul Drude Institute for Solid State Electronics 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Timur",
      "family": "Flissikowski",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Paul Drude Institute for Solid State Electronics 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Manfred",
      "family": "Ramsteiner",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Paul Drude Institute for Solid State Electronics 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Holger T.",
      "family": "Grahn",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Paul Drude Institute for Solid State Electronics 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Henning",
      "family": "Riechert",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Paul Drude Institute for Solid State Electronics 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany"
        }
      ]
    },
    {
      "given": "Paul",
      "family": "Fons",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Institute of Advanced Industrial Science and Technology 2 Center for Applied Near-Field Optics Research, , Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan"
        }
      ]
    },
    {
      "given": "Alex",
      "family": "Kolobov",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Institute of Advanced Industrial Science and Technology 2 Center for Applied Near-Field Optics Research, , Tsukuba Central 4, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8562, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2009,
        1,
        26
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070222393504300_c1",
      "doi-asserted-by": "publisher",
      "first-page": "265",
      "DOI": "10.1038/nmat1359",
      "volume": "4",
      "year": "2005",
      "journal-title": "Nature Mater."
    },
    {
      "key": "2023070222393504300_c2",
      "doi-asserted-by": "publisher",
      "first-page": "7020",
      "DOI": "10.1063/1.1314323",
      "volume": "88",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070222393504300_c3",
      "doi-asserted-by": "publisher",
      "first-page": "703",
      "DOI": "10.1038/nmat1215",
      "volume": "3",
      "year": "2004",
      "journal-title": "Nature Mater."
    },
    {
      "key": "2023070222393504300_c4",
      "doi-asserted-by": "publisher",
      "first-page": "1267",
      "DOI": "10.1063/1.1535237",
      "volume": "74",
      "year": "2003",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2023070222393504300_c5",
      "doi-asserted-by": "crossref",
      "first-page": "155",
      "DOI": "10.1016/S0022-0248(01)02392-2",
      "volume": "236",
      "year": "2002",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070222393504300_c6",
      "doi-asserted-by": "publisher",
      "first-page": "1615",
      "DOI": "10.1103/PhysRevB.62.1615",
      "volume": "62",
      "year": "2000",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070222393504300_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1507",
      "DOI": "10.1116/1.589976",
      "volume": "16",
      "year": "1998",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023070222393504300_c8",
      "doi-asserted-by": "publisher",
      "first-page": "1674",
      "DOI": "10.1143/JJAP.41.1674",
      "volume": "41",
      "year": "2002",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2023070222393504300_c9",
      "doi-asserted-by": "publisher",
      "first-page": "685",
      "DOI": "10.1107/S0108768104022906",
      "volume": "60",
      "year": "2004",
      "journal-title": "Acta Crystallogr., Sect. B: Struct. Sci."
    },
    {
      "key": "2023070222393504300_c10",
      "doi-asserted-by": "publisher",
      "first-page": "104111",
      "DOI": "10.1103/PhysRevB.69.104111",
      "volume": "69",
      "year": "2004",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070222393504300_c11",
      "doi-asserted-by": "publisher",
      "first-page": "1074",
      "DOI": "10.1016/j.jpcs.2007.02.027",
      "volume": "68",
      "year": "2007",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2023070222393504300_c12",
      "doi-asserted-by": "crossref",
      "first-page": "1279",
      "DOI": "10.1016/S0022-3697(98)00050-X",
      "volume": "59",
      "year": "1998",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2023070222393504300_c13",
      "doi-asserted-by": "publisher",
      "first-page": "093509",
      "DOI": "10.1063/1.1884248",
      "volume": "97",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3072615/14407244/041902_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3072615/14407244/041902_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T22:39:44Z",
    "timestamp": 1688337584000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/94/4/041902/337493/Epitaxy-of-Ge-Sb-Te-phase-change-memory-alloys"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2009,
        1,
        26
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          2009,
          1,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.3072615",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2009,
        1,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2009,
        1,
        26
      ]
    ]
  },
  "article-number": "041902"
}