DOI: 10.1063/1.3037216. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

10.1063/1.3037216

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 Å were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 Å. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018°). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 °C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

Bibliography

Biegalski, M. D., Fong, D. D., Eastman, J. A., Fuoss, P. H., Streiffer, S. K., Heeg, T., Schubert, J., Tian, W., Nelson, C. T., Pan, X. Q., Hawley, M. E., Bernhagen, M., Reiche, P., Uecker, R., Trolier-McKinstry, S., & Schlom, D. G. (2008). Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3. Journal of Applied Physics, 104(11).

Authors 16

M. D. Biegalski (first)
D. D. Fong (additional)
J. A. Eastman (additional)
P. H. Fuoss (additional)
S. K. Streiffer (additional)
T. Heeg (additional)
J. Schubert (additional)
W. Tian (additional)
C. T. Nelson (additional)
X. Q. Pan (additional)
M. E. Hawley (additional)
M. Bernhagen (additional)
P. Reiche (additional)
R. Uecker (additional)
S. Trolier-McKinstry (additional)
D. G. Schlom (additional)

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Dates

Type	When
Created	16 years, 8 months ago (Dec. 11, 2008, 2:49 p.m.)
Deposited	2 years, 1 month ago (June 24, 2023, 8:57 p.m.)
Indexed	3 weeks ago (July 31, 2025, 11:48 p.m.)
Issued	16 years, 8 months ago (Dec. 1, 2008)
Published	16 years, 8 months ago (Dec. 1, 2008)
Published Online	16 years, 8 months ago (Dec. 10, 2008)
Published Print	16 years, 8 months ago (Dec. 1, 2008)

Funders 0

None

BibTeX

@article{Biegalski_2008, title={Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3}, volume={104}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3037216}, DOI={10.1063/1.3037216}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Biegalski, M. D. and Fong, D. D. and Eastman, J. A. and Fuoss, P. H. and Streiffer, S. K. and Heeg, T. and Schubert, J. and Tian, W. and Nelson, C. T. and Pan, X. Q. and Hawley, M. E. and Bernhagen, M. and Reiche, P. and Uecker, R. and Trolier-McKinstry, S. and Schlom, D. G.}, year={2008}, month=dec }

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