Abstract
We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p-type behavior of ZnS NRs and significant enhancement in p-type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p-type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS–H bonding.
References
20
Referenced
32
10.1063/1.363937
/ J. Appl. Phys. (1977)10.1103/PhysRevLett.72.416
/ Phys. Rev. Lett. (1994)10.1063/1.1419229
/ Appl. Phys. Lett. (2001)10.1002/adma.200304852
/ Adv. Mater. (Weinheim, Ger.) (2003)10.1023/A:1004396519134
/ J. Mater. Sci. (1998){'key': '2023062117441836600_c6', 'first-page': '299', 'volume': '33', 'year': '1997', 'journal-title': 'Thin Solid Films'}
/ Thin Solid Films (1997)10.1021/ic00115a038
/ Inorg. Chem. (1995)10.1063/1.1805714
/ Appl. Phys. Lett. (2004)10.1063/1.2161073
/ Appl. Phys. Lett. (2006)10.1038/nmat1522
/ Nature Mater. (2005)10.1063/1.1647270
/ Appl. Phys. Lett. (2004)10.1063/1.1610259
/ Appl. Phys. Lett. (2003)10.1002/adma.200390079
/ Adv. Mater. (Weinheim, Ger.) (2003)10.1021/nl073022t
/ Nano Lett. (2008)10.1002/adma.200701377
/ Adv. Mater. (Weinheim, Ger.) (2008)10.1063/1.1928318
/ Appl. Phys. Lett. (2005)10.1063/1.121906
/ Appl. Phys. Lett. (1998)10.1063/1.2387982
/ Appl. Phys. Lett. (2006)10.1021/nl034003w
/ Nano Lett. (2003)10.1016/0022-0248(95)00766-0
/ J. Cryst. Growth (1996)
Dates
Type | When |
---|---|
Created | 16 years, 9 months ago (Nov. 24, 2008, 7:06 p.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 8:02 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:52 a.m.) |
Issued | 16 years, 9 months ago (Nov. 24, 2008) |
Published | 16 years, 9 months ago (Nov. 24, 2008) |
Published Online | 16 years, 9 months ago (Nov. 24, 2008) |
Published Print | 16 years, 9 months ago (Nov. 24, 2008) |
@article{Yuan_2008, title={p -type conduction in nitrogen-doped ZnS nanoribbons}, volume={93}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3025846}, DOI={10.1063/1.3025846}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yuan, G. D. and Zhang, W. J. and Zhang, W. F. and Fan, X. and Bello, I. and Lee, C. S. and Lee, S. T.}, year={2008}, month=nov }