Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual ZnS NRs revealed the p-type behavior of ZnS NRs and significant enhancement in p-type transport properties upon annealing in argon ambient. Annealing-induced conversion of highly insulating to p-type conducting ZnS NRs was attributed to activation of N acceptors from the passivated states of NS–H bonding.

Bibliography

Yuan, G. D., Zhang, W. J., Zhang, W. F., Fan, X., Bello, I., Lee, C. S., & Lee, S. T. (2008). p -type conduction in nitrogen-doped ZnS nanoribbons. Applied Physics Letters, 93(21).

Authors 7
  1. G. D. Yuan (first)
  2. W. J. Zhang (additional)
  3. W. F. Zhang (additional)
  4. X. Fan (additional)
  5. I. Bello (additional)
  6. C. S. Lee (additional)
  7. S. T. Lee (additional)
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Dates
Type When
Created 16 years, 9 months ago (Nov. 24, 2008, 7:06 p.m.)
Deposited 2 years, 2 months ago (June 23, 2023, 8:02 p.m.)
Indexed 1 month ago (July 30, 2025, 6:52 a.m.)
Issued 16 years, 9 months ago (Nov. 24, 2008)
Published 16 years, 9 months ago (Nov. 24, 2008)
Published Online 16 years, 9 months ago (Nov. 24, 2008)
Published Print 16 years, 9 months ago (Nov. 24, 2008)
Funders 0

None

@article{Yuan_2008, title={p -type conduction in nitrogen-doped ZnS nanoribbons}, volume={93}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.3025846}, DOI={10.1063/1.3025846}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yuan, G. D. and Zhang, W. J. and Zhang, W. F. and Fan, X. and Bello, I. and Lee, C. S. and Lee, S. T.}, year={2008}, month=nov }