Abstract
We investigated the influence of dislocations, located at the interface of a ferroelectric film and its underlying substrate, on the ferroelectric hysteresis loop including the remanent polarization and coercive field using phase-field simulations. We considered epitaxial ferroelectric BaTiO3 films and found that the hysteresis loop is strongly dependent on the type and density of interfacial dislocations. The dislocations that stabilize multiple ferroelectric variants and domains reduce the coercive field, and consequently, the corresponding remanent polarization also decreases.
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Dates
Type | When |
---|---|
Created | 16 years, 9 months ago (Nov. 19, 2008, 6:17 p.m.) |
Deposited | 2 years ago (Aug. 1, 2023, 5:58 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:52 a.m.) |
Issued | 16 years, 9 months ago (Nov. 15, 2008) |
Published | 16 years, 9 months ago (Nov. 15, 2008) |
Published Online | 16 years, 9 months ago (Nov. 19, 2008) |
Published Print | 16 years, 9 months ago (Nov. 15, 2008) |
@article{Li_2008, title={Influence of interfacial dislocations on hysteresis loops of ferroelectric films}, volume={104}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3021354}, DOI={10.1063/1.3021354}, number={10}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Li, Y. L. and Hu, S. Y. and Choudhury, S. and Baskes, M. I. and Saxena, A. and Lookman, T. and Jia, Q. X. and Schlom, D. G. and Chen, L. Q.}, year={2008}, month=nov }