Abstract
Molecular simulations are used to evaluate thermal resistance between crystalline silicon and a vertically oriented carbon nanotube (CNT). Without chemical bonds between CNT and Si the thermal resistance is high and its values are consistent with that measured in experiment on vertical CNT arrays. With chemical bonds the thermal resistance is reduced by two orders of magnitude demonstrating significant potential of CNT arrays for thermal management applications. The underlying mechanism for the very large effect of chemical bonding is revealed by simulations of individual phonon scattering across the interface and understood within an analytical solution of a simple spring-mass chain model.
References
23
Referenced
101
{'year': '2004', 'key': '2023070320571634500_c1'}
(2004){'key': '2023070320571634500_c2', 'first-page': '285', 'volume': '9', 'year': '2005', 'journal-title': 'Intel Technol. J.'}
/ Intel Technol. J. (2005){'year': '2003', 'key': '2023070320571634500_c3'}
(2003)10.1021/nl051044e
/ Nano Lett. (2005)10.1103/PhysRevLett.87.215502
/ Phys. Rev. Lett. (2001){'year': '2004', 'key': '2023070320571634500_c6', 'first-page': '549'}
(2004)10.1016/j.ijheatmasstransfer.2005.09.039
/ Int. J. Heat Mass Transfer (2006)10.1109/TCAPT.2007.892079
/ IEEE Trans. Compon. Packag. Technol. (2007)10.1063/1.2644018
/ Appl. Phys. Lett. (2007)10.1063/1.2510998
/ J. Appl. Phys. (2007)10.1016/j.carbon.2006.12.007
/ Carbon (2007)10.1063/1.1887839
/ Appl. Phys. Lett. (2005)10.1063/1.2905211
/ J. Chem. Phys. (2008)10.1021/ja00086a030
/ J. Am. Chem. Soc. (1994)10.1103/PhysRevB.59.13707
/ Phys. Rev. B (1999)10.1103/RevModPhys.61.605
/ Rev. Mod. Phys. (1989)10.1103/PhysRevLett.84.4613
/ Phys. Rev. Lett. (2000)10.1080/10893950390150467
/ Microscale Thermophys. Eng. (2003)10.1063/1.1465106
/ Appl. Phys. Lett. (2002)10.1088/0022-3719/4/8/018
/ J. Phys. C (1971)10.1103/PhysRevB.74.033408
/ Phys. Rev. B (2006)10.1103/PhysRevE.75.061128
/ Phys. Rev. E (2007)10.1140/epjb/e2008-00195-8
/ Eur. Phys. J. B (2008)
Dates
Type | When |
---|---|
Created | 16 years, 10 months ago (Oct. 20, 2008, 6:48 p.m.) |
Deposited | 2 years, 1 month ago (July 3, 2023, 7:56 p.m.) |
Indexed | 3 weeks, 1 day ago (July 30, 2025, 6:52 a.m.) |
Issued | 16 years, 10 months ago (Oct. 15, 2008) |
Published | 16 years, 10 months ago (Oct. 15, 2008) |
Published Online | 16 years, 10 months ago (Oct. 20, 2008) |
Published Print | 16 years, 10 months ago (Oct. 15, 2008) |
@article{Hu_2008, title={Interfacial thermal conductance between silicon and a vertical carbon nanotube}, volume={104}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3000441}, DOI={10.1063/1.3000441}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hu, Ming and Keblinski, Pawel and Wang, Jian-Sheng and Raravikar, Nachiket}, year={2008}, month=oct }