Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

Molecular simulations are used to evaluate thermal resistance between crystalline silicon and a vertically oriented carbon nanotube (CNT). Without chemical bonds between CNT and Si the thermal resistance is high and its values are consistent with that measured in experiment on vertical CNT arrays. With chemical bonds the thermal resistance is reduced by two orders of magnitude demonstrating significant potential of CNT arrays for thermal management applications. The underlying mechanism for the very large effect of chemical bonding is revealed by simulations of individual phonon scattering across the interface and understood within an analytical solution of a simple spring-mass chain model.

Bibliography

Hu, M., Keblinski, P., Wang, J.-S., & Raravikar, N. (2008). Interfacial thermal conductance between silicon and a vertical carbon nanotube. Journal of Applied Physics, 104(8).

Authors 4
  1. Ming Hu (first)
  2. Pawel Keblinski (additional)
  3. Jian-Sheng Wang (additional)
  4. Nachiket Raravikar (additional)
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Dates
Type When
Created 16 years, 10 months ago (Oct. 20, 2008, 6:48 p.m.)
Deposited 2 years, 1 month ago (July 3, 2023, 7:56 p.m.)
Indexed 3 weeks, 1 day ago (July 30, 2025, 6:52 a.m.)
Issued 16 years, 10 months ago (Oct. 15, 2008)
Published 16 years, 10 months ago (Oct. 15, 2008)
Published Online 16 years, 10 months ago (Oct. 20, 2008)
Published Print 16 years, 10 months ago (Oct. 15, 2008)
Funders 0

None

@article{Hu_2008, title={Interfacial thermal conductance between silicon and a vertical carbon nanotube}, volume={104}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.3000441}, DOI={10.1063/1.3000441}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Hu, Ming and Keblinski, Pawel and Wang, Jian-Sheng and Raravikar, Nachiket}, year={2008}, month=oct }