Abstract
We have fabricated superconducting nanowire single photon detectors made of NbTiN on a silicon substrate. This type of material reduces the dark count rate by a factor of 10 compared to identical NbN detectors, enabling single photon detection with unprecedented signal to noise ratio: we report a noise equivalent power of 10−19 W Hz−1/2 at 4.2 K. The compatibility of our superconducting device with silicon enables its integration with complex structures.
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Dates
Type | When |
---|---|
Created | 16 years, 11 months ago (Sept. 29, 2008, 6:09 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 3:05 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:51 a.m.) |
Issued | 16 years, 11 months ago (Sept. 29, 2008) |
Published | 16 years, 11 months ago (Sept. 29, 2008) |
Published Online | 16 years, 11 months ago (Sept. 29, 2008) |
Published Print | 16 years, 11 months ago (Sept. 29, 2008) |
@article{Dorenbos_2008, title={Low noise superconducting single photon detectors on silicon}, volume={93}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2990646}, DOI={10.1063/1.2990646}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dorenbos, S. N. and Reiger, E. M. and Perinetti, U. and Zwiller, V. and Zijlstra, T. and Klapwijk, T. M.}, year={2008}, month=sep }