DOI: 10.1063/1.2966145. Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

10.1063/1.2966145

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have demonstrated a self-aligned top-gate amorphous gallium indium zinc oxide thin film transistor (a-GIZO TFT). It had a field effect mobility of 5 cm2/V s, a threshold voltage of 0.2 V, and a subthreshold swing of 0.2 V/decade. Ar plasma was treated on the source/drain region of the a-GIZO active layer to reduce the series resistance. After Ar plasma treatment, the surface of the source/drain region was divided into In-rich and In-deficient regions. The a-GIZO TFT also had a constant sheet resistance of 1 kΩ/◻ for a film thickness of over 40 nm. The interface between the source/drain Mo metal and the Ar plasma-treated a-GIZO indicated a good Ohmic contact and a contact resistivity of 50 μΩ cm2.

Bibliography

Park, J., Song, I., Kim, S., Kim, S., Kim, C., Lee, J., Lee, H., Lee, E., Yin, H., Kim, K.-K., Kwon, K.-W., & Park, Y. (2008). Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors. Applied Physics Letters, 93(5).

Authors 12

Jaechul Park (first)
Ihun Song (additional)
Sunil Kim (additional)
Sangwook Kim (additional)
Changjung Kim (additional)
Jaecheol Lee (additional)
Hyungik Lee (additional)
Eunha Lee (additional)
Huaxiang Yin (additional)
Kyoung-Kok Kim (additional)
Kee-Won Kwon (additional)
Youngsoo Park (additional)

References 15 Referenced 89

10.1063/1.1542677 / Appl. Phys. Lett. (2003)
10.1016/0925-3467(95)00028-3 / Opt. Mater. (Amsterdam, Neth.) (1995)
10.1016/S0167-9317(99)00492-X / Microelectron. Eng. (2000)
10.1063/1.121620 / Appl. Phys. Lett. (1998)
{'key': '2023070215542013800_c5', 'first-page': '1614', 'volume': 'E83-C', 'year': '2000', 'journal-title': 'IEICE Trans. Electron.'} / IEICE Trans. Electron. (2000)
10.1016/S1369-8001(99)00022-0 / Mater. Sci. Semicond. Process. (1999)
10.1016/S0040-6090(00)01339-0 / Thin Solid Films (2000)
10.1063/1.1695437 / Appl. Phys. Lett. (2004)
10.1063/1.1843286 / Appl. Phys. Lett. (2005)
10.1038/nature03090 / Nature (London) (2004)
{'volume': '2006', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '307', 'key': '2023070215542013800_c11'} / Tech. Dig. - Int. Electron Devices Meet.
10.1063/1.2742790 / Appl. Phys. Lett. (2007)
10.1063/1.2753107 / Appl. Phys. Lett. (2007)
{'year': '2008', 'key': '2023070215542013800_c14', 'first-page': '621'} (2008)
10.1063/1.1379061 / Appl. Phys. Lett. (2001)

Dates

Type	When
Created	17 years ago (Aug. 5, 2008, 6:31 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 11:54 a.m.)
Indexed	1 month ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 1 month ago (Aug. 4, 2008)
Published	17 years, 1 month ago (Aug. 4, 2008)
Published Online	17 years, 1 month ago (Aug. 4, 2008)
Published Print	17 years, 1 month ago (Aug. 4, 2008)

Funders 0

None

BibTeX

@article{Park_2008, title={Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors}, volume={93}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2966145}, DOI={10.1063/1.2966145}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Park, Jaechul and Song, Ihun and Kim, Sunil and Kim, Sangwook and Kim, Changjung and Lee, Jaecheol and Lee, Hyungik and Lee, Eunha and Yin, Huaxiang and Kim, Kyoung-Kok and Kwon, Kee-Won and Park, Youngsoo}, year={2008}, month=aug }

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