DOI: 10.1063/1.2954015. Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

10.1063/1.2954015

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01–0.04cm2∕Vs and threshold voltages ⩽0.35V are demonstrated. The present work paves the way toward solution processable low-voltage/power, organic complementary circuits.

Bibliography

WÃ¶bkenberg, P. H., Ball, J., Kooistra, F. B., Hummelen, J. C., de Leeuw, D. M., Bradley, D. D. C., & Anthopoulos, T. D. (2008). Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics. Applied Physics Letters, 93(1).

Authors 7

Paul H. Wöbkenberg (first)
James Ball (additional)
Floris B. Kooistra (additional)
Jan C. Hummelen (additional)
Dago M. de Leeuw (additional)
Donal D. C. Bradley (additional)
Thomas D. Anthopoulos (additional)

References 18 Referenced 111

10.1038/35000530 / Nature (London) (2000)
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10.1002/adma.200500517 / Adv. Mater. (Weinheim, Ger.) (2005)
10.1002/(SICI)1521-4095(199911)11:16<1372::AID-ADMA1372>3.0.CO;2-V / Adv. Mater. (Weinheim, Ger.) (1999)
10.1063/1.1880434 / Appl. Phys. Lett. (2005)
10.1063/1.2374864 / Appl. Phys. Lett. (2006)
10.1038/nature02987 / Nature (London) (2004)
10.1073/pnas.0501027102 / Proc. Natl. Acad. Sci. U.S.A. (2002)
10.1038/nature05533 / Nature (London) (2007)
10.1063/1.126219 / Appl. Phys. Lett. (2000)
10.1063/1.2794702 / J. Appl. Phys. (2007)
10.1063/1.2857502 / Appl. Phys. Lett. (2008)
10.1063/1.2143113 / Appl. Phys. Lett. (2005)
10.1063/1.2907348 / Appl. Phys. Lett. (2008)
10.1016/S0001-8686(98)00087-6 / Adv. Colloid Interface Sci. (1999)
10.1103/RevModPhys.57.827 / Rev. Mod. Phys. (1985)
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Dates

Type	When
Created	17 years, 1 month ago (July 15, 2008, 1:15 a.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 3:54 p.m.)
Indexed	1 month ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 1 month ago (July 7, 2008)
Published	17 years, 1 month ago (July 7, 2008)
Published Online	17 years, 1 month ago (July 8, 2008)
Published Print	17 years, 1 month ago (July 7, 2008)

Funders 0

None

BibTeX

@article{W_bkenberg_2008, title={Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics}, volume={93}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2954015}, DOI={10.1063/1.2954015}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wöbkenberg, Paul H. and Ball, James and Kooistra, Floris B. and Hummelen, Jan C. and de Leeuw, Dago M. and Bradley, Donal D. C. and Anthopoulos, Thomas D.}, year={2008}, month=jul }

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