DOI: 10.1063/1.2949315. Atomically sharp catalyst-free wurtzite GaAs∕AlGaAs nanoneedles grown on silicon

Atomically sharp catalyst-free wurtzite GaAs∕AlGaAs nanoneedles grown on silicon

10.1063/1.2949315

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report a catalyst-free, self-assembled growth mode generating single-crystal wurtzite phase ultrasharp GaAs∕AlGaAs nanoneedles on both GaAs and Si substrates via low-temperature metal-organic chemical vapor deposition. The needles exhibit record-narrow tip diameters of 2–4nm wide and sharp 6°–9° taper angles. The length is dependent on growth time and up to 3–4μm nanoneedles are attained. The structures do not exhibit twinning defects, contrary to typical GaAs nanowires grown by vapor-liquid-solid catalyzed growth. AlGaAs layered nanoneedle structures are also demonstrated.

Bibliography

Moewe, M., Chuang, L. C., Crankshaw, S., Chase, C., & Chang-Hasnain, C. (2008). Atomically sharp catalyst-free wurtzite GaAsâAlGaAs nanoneedles grown on silicon. Applied Physics Letters, 93(2).

Authors 5

Michael Moewe (first)
Linus C. Chuang (additional)
Shanna Crankshaw (additional)
Chris Chase (additional)
Connie Chang-Hasnain (additional)

References 21 Referenced 101

10.1116/1.1880072 / J. Vac. Sci. Technol. B (2005)
10.1063/1.2416050 / Appl. Phys. Lett. (2006)
10.1063/1.2245374 / Appl. Phys. Lett. (2005)
10.1103/PhysRevB.30.519 / Phys. Rev. B (1984)
10.1016/S0009-2614(99)01451-7 / Chem. Phys. Lett. (2000)
10.1063/1.2742637 / Appl. Phys. Lett. (2007)
10.1063/1.369753 / J. Appl. Phys. (1999)
10.1063/1.1753975 / Appl. Phys. Lett. (1964)
10.1063/1.117830 / Appl. Phys. Lett. (1996)
10.1016/0022-0248(87)90218-1 / J. Cryst. Growth (1987)
10.1016/0022-0248(89)90090-0 / J. Cryst. Growth (1989)
10.1063/1.2832643 / Appl. Phys. Lett. (2008)
10.1063/1.1903106 / J. Appl. Phys. (2005)
10.1103/PhysRevB.74.121302 / Phys. Rev. B (2006)
10.1109/LPT.2006.873923 / IEEE Photonics Technol. Lett. (2006)
10.1103/PhysRevLett.95.215505 / Phys. Rev. Lett. (2005)
10.1080/09500830601055367 / Philos. Mag. Lett. (2006)
10.1063/1.359026 / J. Appl. Phys. (1995)
10.1038/nmat1677 / Nat. Mater. (2006)
10.1103/PhysRevB.75.245121 / Phys. Rev. B (2006)
10.1063/1.1368156 / J. Appl. Phys. (2001)

Dates

Type	When
Created	17 years, 1 month ago (July 17, 2008, 4:03 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 4:34 p.m.)
Indexed	3 weeks, 6 days ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 1 month ago (July 14, 2008)
Published	17 years, 1 month ago (July 14, 2008)
Published Online	17 years, 1 month ago (July 16, 2008)
Published Print	17 years, 1 month ago (July 14, 2008)

Funders 0

None

BibTeX

@article{Moewe_2008, title={Atomically sharp catalyst-free wurtzite GaAs∕AlGaAs nanoneedles grown on silicon}, volume={93}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2949315}, DOI={10.1063/1.2949315}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Moewe, Michael and Chuang, Linus C. and Crankshaw, Shanna and Chase, Chris and Chang-Hasnain, Connie}, year={2008}, month=jul }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:51:41Z",
    "timestamp": 1753872701534,
    "version": "3.41.2"
  },
  "reference-count": 21,
  "publisher": "AIP Publishing",
  "issue": "2",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2008,
        7,
        14
      ]
    ]
  },
  "abstract": "<jats:p>We report a catalyst-free, self-assembled growth mode generating single-crystal wurtzite phase ultrasharp GaAs\u2215AlGaAs nanoneedles on both GaAs and Si substrates via low-temperature metal-organic chemical vapor deposition. The needles exhibit record-narrow tip diameters of 2\u20134nm wide and sharp 6\u00b0\u20139\u00b0 taper angles. The length is dependent on growth time and up to 3\u20134\u03bcm nanoneedles are attained. The structures do not exhibit twinning defects, contrary to typical GaAs nanowires grown by vapor-liquid-solid catalyzed growth. AlGaAs layered nanoneedle structures are also demonstrated.</jats:p>",
  "DOI": "10.1063/1.2949315",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2008,
        7,
        17
      ]
    ],
    "date-time": "2008-07-17T20:03:39Z",
    "timestamp": 1216325019000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 101,
  "title": "Atomically sharp catalyst-free wurtzite GaAs\u2215AlGaAs nanoneedles grown on silicon",
  "prefix": "10.1063",
  "volume": "93",
  "author": [
    {
      "given": "Michael",
      "family": "Moewe",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of California at Berkeley Department of Electrical Engineering and Computer Sciences and Applied Science and Technology Group, , Berkeley, California 94720, USA"
        }
      ]
    },
    {
      "given": "Linus C.",
      "family": "Chuang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of California at Berkeley Department of Electrical Engineering and Computer Sciences and Applied Science and Technology Group, , Berkeley, California 94720, USA"
        }
      ]
    },
    {
      "given": "Shanna",
      "family": "Crankshaw",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of California at Berkeley Department of Electrical Engineering and Computer Sciences and Applied Science and Technology Group, , Berkeley, California 94720, USA"
        }
      ]
    },
    {
      "given": "Chris",
      "family": "Chase",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of California at Berkeley Department of Electrical Engineering and Computer Sciences and Applied Science and Technology Group, , Berkeley, California 94720, USA"
        }
      ]
    },
    {
      "given": "Connie",
      "family": "Chang-Hasnain",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of California at Berkeley Department of Electrical Engineering and Computer Sciences and Applied Science and Technology Group, , Berkeley, California 94720, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2008,
        7,
        16
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070220342857600_c1",
      "doi-asserted-by": "publisher",
      "first-page": "632",
      "DOI": "10.1116/1.1880072",
      "volume": "23",
      "year": "2005",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023070220342857600_c2",
      "doi-asserted-by": "publisher",
      "first-page": "253112",
      "DOI": "10.1063/1.2416050",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c3",
      "doi-asserted-by": "publisher",
      "first-page": "053110",
      "DOI": "10.1063/1.2245374",
      "volume": "89",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c4",
      "doi-asserted-by": "publisher",
      "first-page": "519",
      "DOI": "10.1103/PhysRevB.30.519",
      "volume": "30",
      "year": "1984",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070220342857600_c5",
      "doi-asserted-by": "publisher",
      "first-page": "131",
      "DOI": "10.1016/S0009-2614(99)01451-7",
      "volume": "318",
      "year": "2000",
      "journal-title": "Chem. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c6",
      "doi-asserted-by": "publisher",
      "first-page": "213108",
      "DOI": "10.1063/1.2742637",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c7",
      "doi-asserted-by": "publisher",
      "first-page": "3832",
      "DOI": "10.1063/1.369753",
      "volume": "85",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070220342857600_c8",
      "doi-asserted-by": "publisher",
      "first-page": "89",
      "DOI": "10.1063/1.1753975",
      "volume": "4",
      "year": "1964",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c9",
      "doi-asserted-by": "publisher",
      "first-page": "4096",
      "DOI": "10.1063/1.117830",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c10",
      "doi-asserted-by": "publisher",
      "first-page": "165",
      "DOI": "10.1016/0022-0248(87)90218-1",
      "volume": "85",
      "year": "1987",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070220342857600_c11",
      "doi-asserted-by": "publisher",
      "first-page": "663",
      "DOI": "10.1016/0022-0248(89)90090-0",
      "volume": "94",
      "year": "1989",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023070220342857600_c12",
      "doi-asserted-by": "publisher",
      "first-page": "013121",
      "DOI": "10.1063/1.2832643",
      "volume": "92",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070220342857600_c13",
      "doi-asserted-by": "publisher",
      "first-page": "114325",
      "DOI": "10.1063/1.1903106",
      "volume": "97",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070220342857600_c14",
      "doi-asserted-by": "publisher",
      "first-page": "121302",
      "DOI": "10.1103/PhysRevB.74.121302",
      "volume": "74",
      "year": "2006",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070220342857600_c15",
      "doi-asserted-by": "publisher",
      "first-page": "1197",
      "DOI": "10.1109/LPT.2006.873923",
      "volume": "18",
      "year": "2006",
      "journal-title": "IEEE Photonics Technol. Lett."
    },
    {
      "key": "2023070220342857600_c16",
      "doi-asserted-by": "publisher",
      "first-page": "215505",
      "DOI": "10.1103/PhysRevLett.95.215505",
      "volume": "95",
      "year": "2005",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023070220342857600_c17",
      "doi-asserted-by": "publisher",
      "first-page": "807",
      "DOI": "10.1080/09500830601055367",
      "volume": "86",
      "year": "2006",
      "journal-title": "Philos. Mag. Lett."
    },
    {
      "key": "2023070220342857600_c18",
      "doi-asserted-by": "publisher",
      "first-page": "447",
      "DOI": "10.1063/1.359026",
      "volume": "77",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070220342857600_c19",
      "doi-asserted-by": "publisher",
      "first-page": "574",
      "DOI": "10.1038/nmat1677",
      "volume": "5",
      "year": "2006",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023070220342857600_c20",
      "doi-asserted-by": "publisher",
      "first-page": "245121",
      "DOI": "10.1103/PhysRevB.75.245121",
      "volume": "75",
      "year": "2006",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070220342857600_c21",
      "doi-asserted-by": "publisher",
      "first-page": "5815",
      "DOI": "10.1063/1.1368156",
      "volume": "89",
      "year": "2001",
      "journal-title": "J. Appl. Phys."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2949315/13175617/023116_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2949315/13175617/023116_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T20:34:32Z",
    "timestamp": 1688330072000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/93/2/023116/336136/Atomically-sharp-catalyst-free-wurtzite-GaAs"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2008,
        7,
        14
      ]
    ]
  },
  "references-count": 21,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          2008,
          7,
          14
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2949315",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2008,
        7,
        14
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2008,
        7,
        14
      ]
    ]
  },
  "article-number": "023116"
}