DOI: 10.1063/1.2945278. Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories

10.1063/1.2945278

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt-based resistance random access memory devices with stable and reproducible nanosecond bipolar switching behavior were studied. The dependencies of memory behavior on cell area, operating temperature, and frequency indicate that the conduction mechanism in low-resistance states is due to electrons hopping through filament paths. We also identify that the set process is essentially equivalent to a soft dielectric breakdown associated with a polarization effect caused by the migration of space charges under a low electric field stress. The generation/recovery of oxygen vacancies and nonlattice oxygen ions play a critical role in resistance switching.

Bibliography

Xu, N., Liu, L., Sun, X., Liu, X., Han, D., Wang, Y., Han, R., Kang, J., & Yu, B. (2008). Characteristics and mechanism of conduction/set process in TiNâZnOâPt resistance switching random-access memories. Applied Physics Letters, 92(23).

Authors 9

Nuo Xu (first)
Lifeng Liu (additional)
Xiao Sun (additional)
Xiaoyan Liu (additional)
Dedong Han (additional)
Yi Wang (additional)
Ruqi Han (additional)
Jinfeng Kang (additional)
Bin Yu (additional)

References 18 Referenced 336

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Dates

Type	When
Created	17 years, 2 months ago (June 13, 2008, 10:49 p.m.)
Deposited	2 years ago (July 31, 2023, 6:24 p.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 2 months ago (June 9, 2008)
Published	17 years, 2 months ago (June 9, 2008)
Published Online	17 years, 2 months ago (June 13, 2008)
Published Print	17 years, 2 months ago (June 9, 2008)

Funders 0

None

BibTeX

@article{Xu_2008, title={Characteristics and mechanism of conduction/set process in TiN竏瓢nO竏姫t resistance switching random-access memories}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2945278}, DOI={10.1063/1.2945278}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Xu, Nuo and Liu, Lifeng and Sun, Xiao and Liu, Xiaoyan and Han, Dedong and Wang, Yi and Han, Ruqi and Kang, Jinfeng and Yu, Bin}, year={2008}, month=jun }

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