DOI: 10.1063/1.2942396. Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

10.1063/1.2942396

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage. The I-V characteristics have been explained in terms of space charge limited conduction. It has been found that injection of holes in these devices play an important role in NDR and resistive switching processes. Formation of nanofilamentary pathways and space charge field inhibition of injection elucidate the observed phenomenon well.

Bibliography

Lin, J., & Ma, D. (2008). Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum. Journal of Applied Physics, 103(12).

Authors 2

Jian Lin (first)
Dongge Ma (additional)

References 18 Referenced 42

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10.1063/1.372019 / J. Appl. Phys. (2000)
10.1063/1.2794475 / J. Appl. Phys. (2007)
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10.1021/la011101t / Langmuir (2002)
{'volume-title': 'Current Injection in Solids', 'year': '1970', 'key': '2023070103042289000_c16'} / Current Injection in Solids (1970)
{'volume-title': 'Electrical Transport in Solids', 'year': '1981', 'key': '2023070103042289000_c17'} / Electrical Transport in Solids (1981)
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Dates

Type	When
Created	17 years, 2 months ago (June 18, 2008, 6:11 p.m.)
Deposited	2 years, 2 months ago (June 30, 2023, 11:04 p.m.)
Indexed	1 month ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 2 months ago (June 15, 2008)
Published	17 years, 2 months ago (June 15, 2008)
Published Online	17 years, 2 months ago (June 18, 2008)
Published Print	17 years, 2 months ago (June 15, 2008)

Funders 0

None

BibTeX

@article{Lin_2008, title={Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum}, volume={103}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2942396}, DOI={10.1063/1.2942396}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lin, Jian and Ma, Dongge}, year={2008}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:51:03Z",
    "timestamp": 1753872663332,
    "version": "3.41.2"
  },
  "reference-count": 18,
  "publisher": "AIP Publishing",
  "issue": "12",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2008,
        6,
        15
      ]
    ]
  },
  "abstract": "<jats:p>Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage. The I-V characteristics have been explained in terms of space charge limited conduction. It has been found that injection of holes in these devices play an important role in NDR and resistive switching processes. Formation of nanofilamentary pathways and space charge field inhibition of injection elucidate the observed phenomenon well.</jats:p>",
  "DOI": "10.1063/1.2942396",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2008,
        6,
        18
      ]
    ],
    "date-time": "2008-06-18T22:11:04Z",
    "timestamp": 1213827064000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 42,
  "title": "Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum",
  "prefix": "10.1063",
  "volume": "103",
  "author": [
    {
      "given": "Jian",
      "family": "Lin",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Chinese Academy of Sciences State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, , Changchun 130022, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "Dongge",
      "family": "Ma",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Chinese Academy of Sciences State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, , Changchun 130022, People\u2019s Republic of China"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2008,
        6,
        18
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070103042289000_c1",
      "doi-asserted-by": "publisher",
      "first-page": "603",
      "DOI": "10.1103/PhysRev.109.603",
      "volume": "109",
      "year": "1958",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2023070103042289000_c2",
      "doi-asserted-by": "publisher",
      "first-page": "664",
      "DOI": "10.1109/5.663544",
      "volume": "86",
      "year": "1998",
      "journal-title": "Proc. IEEE"
    },
    {
      "key": "2023070103042289000_c3",
      "doi-asserted-by": "publisher",
      "first-page": "1337",
      "DOI": "10.1063/1.372019",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070103042289000_c4",
      "doi-asserted-by": "publisher",
      "first-page": "083701",
      "DOI": "10.1063/1.2794475",
      "volume": "102",
      "year": "2007",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070103042289000_c5",
      "doi-asserted-by": "publisher",
      "first-page": "054303",
      "DOI": "10.1063/1.2033142",
      "volume": "98",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070103042289000_c6",
      "doi-asserted-by": "publisher",
      "first-page": "083514",
      "DOI": "10.1063/1.2338513",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070103042289000_c7",
      "doi-asserted-by": "publisher",
      "first-page": "094504",
      "DOI": "10.1063/1.2364036",
      "volume": "100",
      "year": "2006",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070103042289000_c8",
      "doi-asserted-by": "publisher",
      "first-page": "013507",
      "DOI": "10.1063/1.2219338",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070103042289000_c9",
      "doi-asserted-by": "publisher",
      "first-page": "2160",
      "DOI": "10.1063/1.117151",
      "volume": "69",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070103042289000_c10",
      "doi-asserted-by": "publisher",
      "first-page": "073710",
      "DOI": "10.1063/1.2794475",
      "volume": "102",
      "year": "2007",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070103042289000_c11",
      "doi-asserted-by": "publisher",
      "first-page": "354",
      "DOI": "10.1109/LED.2006.872915",
      "volume": "27",
      "year": "2006",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023070103042289000_c12",
      "doi-asserted-by": "publisher",
      "first-page": "2531",
      "DOI": "10.1021/jp027369q",
      "volume": "107",
      "year": "2003",
      "journal-title": "J. Phys. Chem. B"
    },
    {
      "key": "2023070103042289000_c13",
      "doi-asserted-by": "publisher",
      "first-page": "2116",
      "DOI": "10.1063/1.1794859",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070103042289000_c14",
      "doi-asserted-by": "publisher",
      "first-page": "5763",
      "DOI": "10.1063/1.1829166",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070103042289000_c15",
      "doi-asserted-by": "publisher",
      "first-page": "450",
      "DOI": "10.1021/la011101t",
      "volume": "18",
      "year": "2002",
      "journal-title": "Langmuir"
    },
    {
      "volume-title": "Current Injection in Solids",
      "year": "1970",
      "key": "2023070103042289000_c16"
    },
    {
      "volume-title": "Electrical Transport in Solids",
      "year": "1981",
      "key": "2023070103042289000_c17"
    },
    {
      "key": "2023070103042289000_c18",
      "doi-asserted-by": "publisher",
      "first-page": "1129",
      "DOI": "10.1088/0034-4885/33/3/306",
      "volume": "33",
      "year": "1970",
      "journal-title": "Rep. Prog. Phys."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2942396/15018779/124505_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2942396/15018779/124505_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        1
      ]
    ],
    "date-time": "2023-07-01T03:04:27Z",
    "timestamp": 1688180667000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/103/12/124505/286957/Origin-of-negative-differential-resistance-and"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2008,
        6,
        15
      ]
    ]
  },
  "references-count": 18,
  "journal-issue": {
    "issue": "12",
    "published-print": {
      "date-parts": [
        [
          2008,
          6,
          15
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2942396",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2008,
        6,
        15
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2008,
        6,
        15
      ]
    ]
  },
  "article-number": "124505"
}