DOI: 10.1063/1.2940732. Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy

10.1063/1.2940732

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We report steady-state and time-resolved photoluminescence (TRPL) measurements on individual GaN nanowires (6–20 μm in length, 30–940 nm in diameter) grown by a nitrogen-plasma-assisted, catalyst-free molecular-beam epitaxy on Si(111) and dispersed onto fused quartz substrates. Induced tensile strain for nanowires bonded to fused silica and compressive strain for nanowires coated with atomic-layer-deposition alumina led to redshifts and blueshifts of the dominant steady-state PL emission peak, respectively. Unperturbed nanowires exhibited spectra associated with high-quality, strain-free material. The TRPL lifetimes, which were similar for both relaxed and strained nanowires of similar size, ranged from 200 ps to over 2 ns, compared well with those of low-defect bulk GaN, and depended linearly on nanowire diameter. The diameter-dependent lifetimes yielded a room-temperature surface recombination velocity S of 9×103 cm/s for our silicon-doped GaN nanowires.

Bibliography

Schlager, J. B., Bertness, K. A., Blanchard, P. T., Robins, L. H., Roshko, A., & Sanford, N. A. (2008). Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy. Journal of Applied Physics, 103(12).

Authors 6

John B. Schlager (first)
Kris A. Bertness (additional)
Paul T. Blanchard (additional)
Lawrence H. Robins (additional)
Alexana Roshko (additional)
Norman A. Sanford (additional)

References 26 Referenced 110

{'volume-title': 'The Blue Laser Diode', 'year': '2000', 'key': '2023070103182606500_c1'} / The Blue Laser Diode (2000)
{'volume-title': 'III-Nitride Semiconductors Optical Properties I, Optoelectronic Properties of Semiconductors and Superlattices', 'year': '2002', 'author': 'Manasreh', 'key': '2023070103182606500_c2'} / III-Nitride Semiconductors Optical Properties I, Optoelectronic Properties of Semiconductors and Superlattices by Manasreh (2002)
10.1002/pssb.200674836 / Phys. Status Solidi B (2007)
10.1016/j.jcrysgro.2005.11.079 / J. Cryst. Growth (2006)
10.1016/j.jcrysgro.2006.10.209 / J. Cryst. Growth (2007)
10.1063/1.2206133 / Appl. Phys. Lett. (2006)
10.1063/1.1490410 / Rev. Sci. Instrum. (2002)
10.1063/1.2204836 / Appl. Phys. Lett. (2006)
10.1088/0957-4484/17/23/011 / Nanotechnology (2006)
10.1016/S0022-0248(98)00193-6 / J. Cryst. Growth (1998)
10.1103/PhysRevB.72.085218 / Phys. Rev. B (2005)
{'key': '2023070103182606500_c12'}
10.1103/PhysRevB.71.115207 / Phys. Rev. B (2005)
{'key': '2023070103182606500_c14'}
10.1016/j.jcrysgro.2006.11.014 / J. Cryst. Growth (2007)
10.1063/1.2206133 / Appl. Phys. Lett. (2006)
10.1063/1.125557 / Appl. Phys. Lett. (1999)
{'first-page': '39', 'volume-title': 'Minority Carriers in III-V Semiconductors: Physics and Applications', 'year': '1993', 'key': '2023070103182606500_c18'} / Minority Carriers in III-V Semiconductors: Physics and Applications (1993)
10.1063/1.1332818 / Appl. Phys. Lett. (2000)
10.1557/S1092578300001277 / MRS Internet J. Nitride Semicond. Res. (1997)
10.1063/1.2370905 / Appl. Phys. Lett. (2006)
10.1063/1.124530 / Appl. Phys. Lett. (1999)
10.1063/1.2204651 / Appl. Phys. Lett. (2006)
{'volume-title': 'Electrons and Holes in Semiconductors', 'year': '1950', 'key': '2023070103182606500_c24'} / Electrons and Holes in Semiconductors (1950)
10.1063/1.1599036 / Appl. Phys. Lett. (2003)
10.1063/1.2398915 / Appl. Phys. Lett. (2006)

Dates

Type	When
Created	17 years, 2 months ago (June 24, 2008, 6:12 p.m.)
Deposited	2 years, 1 month ago (June 30, 2023, 11:18 p.m.)
Indexed	1 month ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 2 months ago (June 15, 2008)
Published	17 years, 2 months ago (June 15, 2008)
Published Online	17 years, 2 months ago (June 24, 2008)
Published Print	17 years, 2 months ago (June 15, 2008)

Funders 0

None

BibTeX

@article{Schlager_2008, title={Steady-state and time-resolved photoluminescence from relaxed and strained GaN nanowires grown by catalyst-free molecular-beam epitaxy}, volume={103}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2940732}, DOI={10.1063/1.2940732}, number={12}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Schlager, John B. and Bertness, Kris A. and Blanchard, Paul T. and Robins, Lawrence H. and Roshko, Alexana and Sanford, Norman A.}, year={2008}, month=jun }

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