Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The crystallization behavior of ultrathin phase change films was studied using time-resolved x-ray diffraction (XRD). Thin films of variable thickness between 1 and 50nm of the phase change materials Ge2Sb2Te5 (GST), N-doped GST, Ge15Sb85, Sb2Te, and Ag- and In-doped Sb2Te were heated in a He atmosphere, and the intensity of the diffracted x-ray peaks was recorded. It was found for all materials that the crystallization temperature increases as the film thickness is reduced below 10nm. The increase depends on the material and can be as high as 200°C for the thinnest films. The thinnest films that show XRD peaks are 2nm for GST and N-GST, 1.5nm for Sb2Te and AgIn-Sb2Te, and 1.3nm for GeSb. This scaling behavior is very promising for the application of phase change materials to solid-state memory technology.

Bibliography

Raoux, S., Jordan-Sweet, J. L., & Kellock, A. J. (2008). Crystallization properties of ultrathin phase change films. Journal of Applied Physics, 103(11).

Authors 3
  1. Simone Raoux (first)
  2. Jean L. Jordan-Sweet (additional)
  3. Andrew J. Kellock (additional)
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Dates
Type When
Created 17 years, 2 months ago (June 11, 2008, 6:12 p.m.)
Deposited 2 years, 1 month ago (July 5, 2023, 2:01 p.m.)
Indexed 3 weeks ago (July 30, 2025, 6:50 a.m.)
Issued 17 years, 2 months ago (June 1, 2008)
Published 17 years, 2 months ago (June 1, 2008)
Published Online 17 years, 2 months ago (June 11, 2008)
Published Print 17 years, 2 months ago (June 1, 2008)
Funders 0

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@article{Raoux_2008, title={Crystallization properties of ultrathin phase change films}, volume={103}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2938076}, DOI={10.1063/1.2938076}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Raoux, Simone and Jordan-Sweet, Jean L. and Kellock, Andrew J.}, year={2008}, month=jun }