Abstract
The structural relaxation (SR) process in an amorphous chalcogenide material (Ge2Sb2Te5) is studied by electrical measurements on phase-change memory devices. SR induces a change in the conduction regime from Poole to Poole–Frenkel transport, evidencing a temperature accelerated defect-annihilation process. Based on an Arrhenius kinetics with distributed activation energies, a temperature-acceleration law is shown, relating the time to reach a specific relaxed state to the temperature during isothermal experiments. This law is demonstrated comparing the time evolution of resistance for different temperatures. These results allow for a significant time reduction in reliability testing of devices and materials affected by SR.
References
16
Referenced
83
{'key': '2023080323113728800_c1', 'first-page': '2953', 'volume': '7', 'year': '2005', 'journal-title': 'J. Optoelectron. Adv. Mater.'}
/ J. Optoelectron. Adv. Mater. (2005)10.1063/1.1610775
/ J. Appl. Phys. (2003)10.1063/1.345592
/ J. Appl. Phys. (1990)10.1063/1.1835560
/ J. Appl. Phys. (2005)10.1109/TED.2004.825805
/ IEEE Trans. Electron Devices (2004)10.1109/TED.2006.888752
/ IEEE Trans. Electron Devices (2007){'key': '2023080323113728800_c7', 'first-page': '499', 'volume': '304', 'year': '2001', 'journal-title': 'Mater. Sci. Eng., A'}
/ Mater. Sci. Eng., A (2001)10.1103/PhysRevB.44.3702
/ Phys. Rev. B (1991)10.1063/1.334406
/ J. Appl. Phys. (1985){'volume-title': 'Physics of Thin Films', 'year': '1975', 'author': 'Hass', 'key': '2023080323113728800_c10'}
/ Physics of Thin Films by Hass (1975){'volume-title': 'Electronic Processes in Non-crystalline Materials', 'year': '1979', 'key': '2023080323113728800_c11'}
/ Electronic Processes in Non-crystalline Materials (1979)10.1063/1.2737137
/ Appl. Phys. Lett. (2007)10.1109/LED.2004.831219
/ IEEE Electron Device Lett. (2004)10.1063/1.2773688
/ J. Appl. Phys. (2007)10.1557/jmr.2007.0103
/ J. Mater. Res. (2007)10.1109/TED.2007.904976
/ IEEE Trans. Electron Devices (2007)
Dates
Type | When |
---|---|
Created | 17 years, 3 months ago (May 17, 2008, 6:11 p.m.) |
Deposited | 2 years ago (Aug. 3, 2023, 7:11 p.m.) |
Indexed | 3 weeks, 1 day ago (July 30, 2025, 6:50 a.m.) |
Issued | 17 years, 3 months ago (May 12, 2008) |
Published | 17 years, 3 months ago (May 12, 2008) |
Published Online | 17 years, 3 months ago (May 16, 2008) |
Published Print | 17 years, 3 months ago (May 12, 2008) |
@article{Ielmini_2008, title={Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2930680}, DOI={10.1063/1.2930680}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ielmini, D. and Lavizzari, S. and Sharma, D. and Lacaita, A. L.}, year={2008}, month=may }