Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The structural relaxation (SR) process in an amorphous chalcogenide material (Ge2Sb2Te5) is studied by electrical measurements on phase-change memory devices. SR induces a change in the conduction regime from Poole to Poole–Frenkel transport, evidencing a temperature accelerated defect-annihilation process. Based on an Arrhenius kinetics with distributed activation energies, a temperature-acceleration law is shown, relating the time to reach a specific relaxed state to the temperature during isothermal experiments. This law is demonstrated comparing the time evolution of resistance for different temperatures. These results allow for a significant time reduction in reliability testing of devices and materials affected by SR.

Bibliography

Ielmini, D., Lavizzari, S., Sharma, D., & Lacaita, A. L. (2008). Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5. Applied Physics Letters, 92(19).

Authors 4
  1. D. Ielmini (first)
  2. S. Lavizzari (additional)
  3. D. Sharma (additional)
  4. A. L. Lacaita (additional)
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Dates
Type When
Created 17 years, 3 months ago (May 17, 2008, 6:11 p.m.)
Deposited 2 years ago (Aug. 3, 2023, 7:11 p.m.)
Indexed 3 weeks, 1 day ago (July 30, 2025, 6:50 a.m.)
Issued 17 years, 3 months ago (May 12, 2008)
Published 17 years, 3 months ago (May 12, 2008)
Published Online 17 years, 3 months ago (May 16, 2008)
Published Print 17 years, 3 months ago (May 12, 2008)
Funders 0

None

@article{Ielmini_2008, title={Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2930680}, DOI={10.1063/1.2930680}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ielmini, D. and Lavizzari, S. and Sharma, D. and Lacaita, A. L.}, year={2008}, month=may }