DOI: 10.1063/1.2928228. Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics

10.1063/1.2928228

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present a facile route which combines the functionalization of a highly oriented pyrolytic graphite surface with an atomic layer deposition (ALD) process to allow for conformal Al2O3 layers. While the trimethylaluminum (TMA)∕H2O process caused selective deposition only along step edges, the TMA∕O3 process began to provide nucleation sites on the basal planes of the surface. O3 pretreatment, immediately followed by the ALD process with TMA∕O3 chemistry, formed Al2O3 layers without any preferential deposition at the step edges. This is attributed to functionalization of graphene by ozone treatment, imparting a hydrophilic character which is desirable for ALD deposition.

Bibliography

Lee, B., Park, S.-Y., Kim, H.-C., Cho, K., Vogel, E. M., Kim, M. J., Wallace, R. M., & Kim, J. (2008). Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics. Applied Physics Letters, 92(20).

Authors 8

Bongki Lee (first)
Seong-Yong Park (additional)
Hyun-Chul Kim (additional)
KyeongJae Cho (additional)
Eric M. Vogel (additional)
Moon J. Kim (additional)
Robert M. Wallace (additional)
Jiyoung Kim (additional)

References 24 Referenced 241

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Dates

Type	When
Created	17 years, 3 months ago (May 21, 2008, 12:11 p.m.)
Deposited	2 years, 2 months ago (June 22, 2023, 9:43 p.m.)
Indexed	3 days, 18 hours ago (Aug. 20, 2025, 8:53 a.m.)
Issued	17 years, 3 months ago (May 19, 2008)
Published	17 years, 3 months ago (May 19, 2008)
Published Online	17 years, 3 months ago (May 20, 2008)
Published Print	17 years, 3 months ago (May 19, 2008)

Funders 0

None

BibTeX

@article{Lee_2008, title={Conformal Al2O3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2928228}, DOI={10.1063/1.2928228}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Bongki and Park, Seong-Yong and Kim, Hyun-Chul and Cho, KyeongJae and Vogel, Eric M. and Kim, Moon J. and Wallace, Robert M. and Kim, Jiyoung}, year={2008}, month=may }

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