DOI: 10.1063/1.2919728. Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping

10.1063/1.2919728

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electrical conductivity of β-Ga2O3 has been attributed so far to an oxygen deficiency, the donors presumably being oxygen vacancies. This letter shows, however, that the conductivity can be intentionally controlled over three orders of magnitude by Si doping. The related free-carrier concentration, which varies between 1016–1018cm−3, corresponds to a 25%–50% effective Si donors. Since Si is the main impurity present in Ga2O3 powders—in the order of the studied doping levels—we conclude that the electrical conductance of β-Ga2O3 can be attributed to Si impurities, and that the contribution of oxygen vacancies, if any, is not dominant.

Bibliography

VÃllora, E. G., Shimamura, K., Yoshikawa, Y., Ujiie, T., & Aoki, K. (2008). Electrical conductivity and carrier concentration control in Î²-Ga2O3 by Si doping. Applied Physics Letters, 92(20).

Authors 5

Encarnación G. Víllora (first)
Kiyoshi Shimamura (additional)
Yukio Yoshikawa (additional)
Takekazu Ujiie (additional)
Kazuo Aoki (additional)

References 22 Referenced 402

10.1103/PhysRev.140.A316 / Phys. Rev. (1965)
10.1063/1.1330559 / Appl. Phys. Lett. (2000)
10.1016/j.tsf.2005.10.080 / Thin Solid Films (2006)
10.1063/1.2745645 / Appl. Phys. Lett. (2007)
10.1016/j.jcrysgro.2004.06.027 / J. Cryst. Growth (2004)
10.1016/0022-3697(67)90305-8 / J. Phys. Chem. Solids (1967)
10.1016/0022-4596(78)90066-X / J. Solid State Chem. (1978)
10.1016/S0925-4005(97)80085-8 / Sens. Actuators B (1996)
10.1063/1.119693 / Appl. Phys. Lett. (1997)
10.1016/S0022-3697(98)00047-X / J. Phys. Chem. Solids (1998)
10.1103/PhysRevB.68.155207 / Phys. Rev. B (2003)
{'volume-title': 'Semiconducting Transparent Thin Films', 'year': '1985', 'key': '2023062216283583100_c12'} / Semiconducting Transparent Thin Films (1985)
{'key': '2023062216283583100_c13', 'first-page': '1', 'volume': '14', 'year': '1969', 'journal-title': 'Russ. J. Inorg. Chem.'} / Russ. J. Inorg. Chem. (1969)
10.1111/j.1551-2916.2004.00683.x / J. Am. Ceram. Soc. (2004)
{'key': '2023062216283583100_c15', 'first-page': '209', 'volume': '19', 'year': '1974', 'journal-title': 'Rev. Roum. Phys.'} / Rev. Roum. Phys. (1974)
10.1063/1.2910770 / Appl. Phys. Lett. (2008)
10.1063/1.2910768 / Appl. Phys. Lett. (2008)
10.1002/1521-396X(200209)193:1<187::AID-PSSA187>3.0.CO;2-1 / Phys. Status Solidi A (2002)
10.1002/zaac.19362260407 / Z. Anorg. Allg. Chem. (1936)
10.1063/1.1727229 / J. Chem. Phys. (1966)
10.1063/1.555799 / J. Phys. Chem. Ref. Data (1987)
{'volume-title': 'Thermodynamical Properties of Inorganic Substances', 'year': '1991', 'key': '2023062216283583100_c22'} / Thermodynamical Properties of Inorganic Substances (1991)

Dates

Type	When
Created	17 years, 3 months ago (May 23, 2008, 6:42 p.m.)
Deposited	2 years, 2 months ago (June 22, 2023, 9:50 p.m.)
Indexed	1 day, 5 hours ago (Sept. 2, 2025, 6:40 a.m.)
Issued	17 years, 3 months ago (May 19, 2008)
Published	17 years, 3 months ago (May 19, 2008)
Published Online	17 years, 3 months ago (May 23, 2008)
Published Print	17 years, 3 months ago (May 19, 2008)

Funders 0

None

BibTeX

@article{V_llora_2008, title={Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2919728}, DOI={10.1063/1.2919728}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Víllora, Encarnación G. and Shimamura, Kiyoshi and Yoshikawa, Yukio and Ujiie, Takekazu and Aoki, Kazuo}, year={2008}, month=may }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        9,
        2
      ]
    ],
    "date-time": "2025-09-02T10:40:37Z",
    "timestamp": 1756809637866,
    "version": "3.41.2"
  },
  "reference-count": 22,
  "publisher": "AIP Publishing",
  "issue": "20",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2008,
        5,
        19
      ]
    ]
  },
  "abstract": "<jats:p>Electrical conductivity of \u03b2-Ga2O3 has been attributed so far to an oxygen deficiency, the donors presumably being oxygen vacancies. This letter shows, however, that the conductivity can be intentionally controlled over three orders of magnitude by Si doping. The related free-carrier concentration, which varies between 1016\u20131018cm\u22123, corresponds to a 25%\u201350% effective Si donors. Since Si is the main impurity present in Ga2O3 powders\u2014in the order of the studied doping levels\u2014we conclude that the electrical conductance of \u03b2-Ga2O3 can be attributed to Si impurities, and that the contribution of oxygen vacancies, if any, is not dominant.</jats:p>",
  "DOI": "10.1063/1.2919728",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2008,
        5,
        23
      ]
    ],
    "date-time": "2008-05-23T22:42:45Z",
    "timestamp": 1211582565000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 402,
  "title": "Electrical conductivity and carrier concentration control in \u03b2-Ga2O3 by Si doping",
  "prefix": "10.1063",
  "volume": "92",
  "author": [
    {
      "given": "Encarnaci\u00f3n G.",
      "family": "V\u00edllora",
      "sequence": "first",
      "affiliation": [
        {
          "name": "National Institute for Materials Science 1 , 1-1 Namiki, Tsukuba 305-0044, Japan"
        }
      ]
    },
    {
      "given": "Kiyoshi",
      "family": "Shimamura",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "National Institute for Materials Science 1 , 1-1 Namiki, Tsukuba 305-0044, Japan"
        }
      ]
    },
    {
      "given": "Yukio",
      "family": "Yoshikawa",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Koha Co., Ltd. 2 , 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022, Japan"
        }
      ]
    },
    {
      "given": "Takekazu",
      "family": "Ujiie",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Koha Co., Ltd. 2 , 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022, Japan"
        }
      ]
    },
    {
      "given": "Kazuo",
      "family": "Aoki",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Koha Co., Ltd. 2 , 2-6-8 Kouyama, Nerima-ku, Tokyo 176-0022, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2008,
        5,
        23
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062216283583100_c1",
      "doi-asserted-by": "publisher",
      "first-page": "A316",
      "DOI": "10.1103/PhysRev.140.A316",
      "volume": "140",
      "year": "1965",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2023062216283583100_c2",
      "doi-asserted-by": "publisher",
      "first-page": "4166",
      "DOI": "10.1063/1.1330559",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062216283583100_c3",
      "doi-asserted-by": "publisher",
      "first-page": "209",
      "DOI": "10.1016/j.tsf.2005.10.080",
      "volume": "500",
      "year": "2006",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023062216283583100_c4",
      "doi-asserted-by": "publisher",
      "first-page": "234102",
      "DOI": "10.1063/1.2745645",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062216283583100_c5",
      "doi-asserted-by": "publisher",
      "first-page": "420",
      "DOI": "10.1016/j.jcrysgro.2004.06.027",
      "volume": "270",
      "year": "2004",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023062216283583100_c6",
      "doi-asserted-by": "publisher",
      "first-page": "403",
      "DOI": "10.1016/0022-3697(67)90305-8",
      "volume": "28",
      "year": "1967",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2023062216283583100_c7",
      "doi-asserted-by": "publisher",
      "first-page": "205",
      "DOI": "10.1016/0022-4596(78)90066-X",
      "volume": "23",
      "year": "1978",
      "journal-title": "J. Solid State Chem."
    },
    {
      "key": "2023062216283583100_c8",
      "doi-asserted-by": "publisher",
      "first-page": "297",
      "DOI": "10.1016/S0925-4005(97)80085-8",
      "volume": "35",
      "year": "1996",
      "journal-title": "Sens. Actuators B"
    },
    {
      "key": "2023062216283583100_c9",
      "doi-asserted-by": "publisher",
      "first-page": "933",
      "DOI": "10.1063/1.119693",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062216283583100_c10",
      "doi-asserted-by": "publisher",
      "first-page": "1241",
      "DOI": "10.1016/S0022-3697(98)00047-X",
      "volume": "59",
      "year": "1998",
      "journal-title": "J. Phys. Chem. Solids"
    },
    {
      "key": "2023062216283583100_c11",
      "doi-asserted-by": "publisher",
      "first-page": "155207",
      "DOI": "10.1103/PhysRevB.68.155207",
      "volume": "68",
      "year": "2003",
      "journal-title": "Phys. Rev. B"
    },
    {
      "volume-title": "Semiconducting Transparent Thin Films",
      "year": "1985",
      "key": "2023062216283583100_c12"
    },
    {
      "key": "2023062216283583100_c13",
      "first-page": "1",
      "volume": "14",
      "year": "1969",
      "journal-title": "Russ. J. Inorg. Chem."
    },
    {
      "key": "2023062216283583100_c14",
      "doi-asserted-by": "crossref",
      "first-page": "683",
      "DOI": "10.1111/j.1551-2916.2004.00683.x",
      "volume": "87",
      "year": "2004",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "key": "2023062216283583100_c15",
      "first-page": "209",
      "volume": "19",
      "year": "1974",
      "journal-title": "Rev. Roum. Phys."
    },
    {
      "key": "2023062216283583100_c16",
      "doi-asserted-by": "crossref",
      "first-page": "202118",
      "DOI": "10.1063/1.2910770",
      "volume": "92",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062216283583100_c17",
      "doi-asserted-by": "crossref",
      "first-page": "201914",
      "DOI": "10.1063/1.2910768",
      "volume": "92",
      "year": "2008",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062216283583100_c18",
      "doi-asserted-by": "publisher",
      "first-page": "187",
      "DOI": "10.1002/1521-396X(200209)193:1&lt;187::AID-PSSA187&gt;3.0.CO;2-1",
      "volume": "193",
      "year": "2002",
      "journal-title": "Phys. Status Solidi A"
    },
    {
      "key": "2023062216283583100_c19",
      "doi-asserted-by": "publisher",
      "first-page": "353",
      "DOI": "10.1002/zaac.19362260407",
      "volume": "226",
      "year": "1936",
      "journal-title": "Z. Anorg. Allg. Chem."
    },
    {
      "key": "2023062216283583100_c20",
      "doi-asserted-by": "publisher",
      "first-page": "3307",
      "DOI": "10.1063/1.1727229",
      "volume": "44",
      "year": "1966",
      "journal-title": "J. Chem. Phys."
    },
    {
      "key": "2023062216283583100_c21",
      "doi-asserted-by": "crossref",
      "first-page": "419",
      "DOI": "10.1063/1.555799",
      "volume": "16",
      "year": "1987",
      "journal-title": "J. Phys. Chem. Ref. Data"
    },
    {
      "volume-title": "Thermodynamical Properties of Inorganic Substances",
      "year": "1991",
      "key": "2023062216283583100_c22"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2919728/14395199/202120_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2919728/14395199/202120_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        23
      ]
    ],
    "date-time": "2023-06-23T01:50:47Z",
    "timestamp": 1687485047000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/92/20/202120/131101/Electrical-conductivity-and-carrier-concentration"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2008,
        5,
        19
      ]
    ]
  },
  "references-count": 22,
  "journal-issue": {
    "issue": "20",
    "published-print": {
      "date-parts": [
        [
          2008,
          5,
          19
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2919728",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2008,
        5,
        19
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2008,
        5,
        19
      ]
    ]
  },
  "article-number": "202120"
}