DOI: 10.1063/1.2919047. Indium stability on InGaAs during atomic H surface cleaning

Indium stability on InGaAs during atomic H surface cleaning

10.1063/1.2919047

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomic H exposure of a GaAs surface at 390°C is a relatively simple method for removing the native oxides without altering the surface stoichiometry. In-situ reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to show that this procedure applied to In0.2Ga0.8As effectively removes the native oxides resulting in an atomically clean surface. However, the bulk InGaAs stoichiometry is not preserved from this treatment. The In:Ga ratio from the substrate is found to decrease by 33%. The implications for high-mobility channel applications are discussed as the carrier mobility increases nearly linearly with the In content.

Bibliography

Aguirre-Tostado, F. S., Milojevic, M., Hinkle, C. L., Vogel, E. M., Wallace, R. M., McDonnell, S., & Hughes, G. J. (2008). Indium stability on InGaAs during atomic H surface cleaning. Applied Physics Letters, 92(17).

Authors 7

F. S. Aguirre-Tostado (first)
M. Milojevic (additional)
C. L. Hinkle (additional)
E. M. Vogel (additional)
R. M. Wallace (additional)
S. McDonnell (additional)
G. J. Hughes (additional)

References 21 Referenced 64

10.1063/1.2822892 / Appl. Phys. Lett. (2007)
10.1007/978-1-4684-4835-1 / Physics and Chemistry of III-V Compound Semiconductor Interfaces by Wilmsen (1985)
10.1063/1.345757 / J. Appl. Phys. (1990)
10.1063/1.97027 / Appl. Phys. Lett. (1986)
10.1116/1.576091 / J. Vac. Sci. Technol. A (1989)
{'volume-title': 'Properties of Lattice-Matched and Strained Indium Gallium Arsenide', 'year': '1993', 'author': 'Bhattacharya', 'key': '2023070219403633800_c6'} / Properties of Lattice-Matched and Strained Indium Gallium Arsenide by Bhattacharya (1993)
10.1063/1.342545 / J. Appl. Phys. (1989)
{'key': '2023070219403633800_c10', 'first-page': '126', 'volume': '21', 'year': '2006', 'journal-title': 'Future Fab International'} / Future Fab International (2006)
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10.1063/1.2801512 / Appl. Phys. Lett. (2007)
{'key': '2023070219403633800_c15'}
10.1016/0040-6090(82)90298-X / Thin Solid Films (1982)
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{'volume-title': 'Applied RHEED: Reflection High-Energy Electron Diffraction During Crystal Growth', 'year': '1999', 'key': '2023070219403633800_c24'} / Applied RHEED: Reflection High-Energy Electron Diffraction During Crystal Growth (1999)
10.1016/j.susc.2005.12.015 / Surf. Sci. (2006)

Dates

Type	When
Created	17 years, 4 months ago (April 30, 2008, 7:19 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 3:40 p.m.)
Indexed	1 month ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 4 months ago (April 28, 2008)
Published	17 years, 4 months ago (April 28, 2008)
Published Online	17 years, 4 months ago (April 30, 2008)
Published Print	17 years, 4 months ago (April 28, 2008)

Funders 0

None

BibTeX

@article{Aguirre_Tostado_2008, title={Indium stability on InGaAs during atomic H surface cleaning}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2919047}, DOI={10.1063/1.2919047}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Aguirre-Tostado, F. S. and Milojevic, M. and Hinkle, C. L. and Vogel, E. M. and Wallace, R. M. and McDonnell, S. and Hughes, G. J.}, year={2008}, month=apr }

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