Abstract
Experimental data on switching in phase change memory testify in favor of its underlying nucleation mechanism with field dependent nucleation barrier. Similar to the standard nucleation, switching occurs after exponentially long delay time when the conditions are not favorable enough, e.g., the nucleation barrier not low or the temperature not high enough. The switching statistics is found to be consistent with the nucleation mechanism as well. A theoretical model of nucleation switching is outlined.
References
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Dates
Type | When |
---|---|
Created | 17 years, 3 months ago (April 28, 2008, 6:56 p.m.) |
Deposited | 2 years, 1 month ago (July 2, 2023, 3:45 p.m.) |
Indexed | 3 weeks ago (July 30, 2025, 6:51 a.m.) |
Issued | 17 years, 3 months ago (April 28, 2008) |
Published | 17 years, 3 months ago (April 28, 2008) |
Published Online | 17 years, 3 months ago (April 28, 2008) |
Published Print | 17 years, 3 months ago (April 28, 2008) |
@article{Karpov_2008, title={Evidence of field induced nucleation in phase change memory}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2917583}, DOI={10.1063/1.2917583}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Karpov, I. V. and Mitra, M. and Kau, D. and Spadini, G. and Kryukov, Y. A. and Karpov, V. G.}, year={2008}, month=apr }