Abstract
This paper describes the optical responses and memory effects of poly(3-hexylthiophene) (P3HT)/CdSe quantum dot (QD) thin-film transistors (TFTs). TFTs incorporating P3HT/CdSe QD blends as the active layer exhibited higher photocurrents than did the corresponding P3HT-only devices because the heterojunction between P3HT and the CdSe QDs enhanced the separation of excitons. Moreover, the CdSe QDs served as trap centers so that the memory effect was maintained for several hours, even when the device was operated without a gating voltage. Here, we demonstrate the potential applicability of such P3HT/CdSe QD TFTs through repeated optical programming and electrical erasing.
References
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Dates
Type | When |
---|---|
Created | 17 years, 4 months ago (April 10, 2008, 6:41 p.m.) |
Deposited | 2 years, 2 months ago (June 25, 2023, 1:48 a.m.) |
Indexed | 1 month, 1 week ago (July 30, 2025, 6:50 a.m.) |
Issued | 17 years, 4 months ago (April 7, 2008) |
Published | 17 years, 4 months ago (April 7, 2008) |
Published Online | 17 years, 4 months ago (April 9, 2008) |
Published Print | 17 years, 4 months ago (April 7, 2008) |
@article{Chen_2008, title={Photoresponses and memory effects in organic thin film transistors incorporating poly(3-hexylthiophene)/CdSe quantum dots}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2899997}, DOI={10.1063/1.2899997}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Chen-Chia and Chiu, Mao-Yuan and Sheu, Jeng-Tzong and Wei, Kung-Hwa}, year={2008}, month=apr }