DOI: 10.1063/1.2897304. Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution

Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution

10.1063/1.2897304

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have probed the role of La substitution on the ferroelectric properties of epitaxial BiFeO3 films on SrTiO3-templated Si. This provides a mechanism to engineer the rhombohedral distortion in the crystal and, thus, control domain structure and switching. With a 10% La substitution, the (Bi0.9La0.1)FeO3 film showed well-saturated ferroelectric hysteresis loops with a remanent polarization of 45μC∕cm2, a converse piezoelectric coefficient d33 of 45pm∕V, and a dielectric constant of 140. Over this range of La substitution, the coercive field systematically decreases such that a coercive voltage of 1V can been obtained in a 100nm thick film. These results show promise for the ultimate implementation of this lead-free multiferroic operating at voltages in the range of 2–3V.

Bibliography

Chu, Y. H., Zhan, Q., Yang, C.-H., Cruz, M. P., Martin, L. W., Zhao, T., Yu, P., Ramesh, R., Joseph, P. T., Lin, I. N., Tian, W., & Schlom, D. G. (2008). Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution. Applied Physics Letters, 92(10).

Authors 12

Y. H. Chu (first)
Q. Zhan (additional)
C.-H. Yang (additional)
M. P. Cruz (additional)
L. W. Martin (additional)
T. Zhao (additional)
P. Yu (additional)
R. Ramesh (additional)
P. T. Joseph (additional)
I. N. Lin (additional)
W. Tian (additional)
D. G. Schlom (additional)

References 14 Referenced 103

10.1038/nature02572 / Nature (London) (2004)
10.1038/nature05023 / Nature (London) (2006)
10.1063/1.1799234 / Appl. Phys. Lett. (2004)
10.1063/1.2801695 / Appl. Phys. Lett. (2007)
10.1016/0375-9601(91)90467-M / Phys. Lett. A (1991)
10.1002/pssa.2210230228 / Phys. Status Solidi (1974)
{'key': '2023062410125454200_c7', 'first-page': '490', 'volume': '8', 'year': '1964', 'journal-title': 'Sov. Phys. Crystallogr.'} / Sov. Phys. Crystallogr. (1964)
10.1063/1.126023 / Appl. Phys. Lett. (2007)
10.1002/adma.200601098 / Adv. Mater. (Weinheim, Ger.) (2006)
10.1134/1.1537425 / Phys. Solid State (2003)
10.1002/adma.200602972 / Adv. Mater. (Weinheim, Ger.) (2007)
10.1007/s12043-002-0226-x / Pramana (2002)
10.1143/JJAP.44.L561 / Jpn. J. Appl. Phys., Part 1 (2005)
{'key': '2023062410125454200_c14', 'first-page': '51', 'volume': '104', 'year': '2007', 'journal-title': 'Proc. Natl. Acad. Sci. U.S.A.'} / Proc. Natl. Acad. Sci. U.S.A. (2007)

Dates

Type	When
Created	17 years, 5 months ago (March 14, 2008, 7:10 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 7:35 p.m.)
Indexed	2 weeks, 5 days ago (Aug. 7, 2025, 4:57 p.m.)
Issued	17 years, 5 months ago (March 10, 2008)
Published	17 years, 5 months ago (March 10, 2008)
Published Online	17 years, 5 months ago (March 14, 2008)
Published Print	17 years, 5 months ago (March 10, 2008)

Funders 0

None

BibTeX

@article{Chu_2008, title={Low voltage performance of epitaxial BiFeO3 films on Si substrates through lanthanum substitution}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2897304}, DOI={10.1063/1.2897304}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chu, Y. H. and Zhan, Q. and Yang, C.-H. and Cruz, M. P. and Martin, L. W. and Zhao, T. and Yu, P. and Ramesh, R. and Joseph, P. T. and Lin, I. N. and Tian, W. and Schlom, D. G.}, year={2008}, month=mar }

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