Abstract
Ti C x thin films were deposited on Al2O3 substrates at 900°C by using a multiple cathode high current pulsed cathodic arc. The Ti:C pulse ratio and, hence, the composition was varied from C rich to Ti rich. It is found that the Al2O3 substrate is decomposed and reacts with the TiCx film to incorporate significant amounts of O and Al in the growing film. When the stoichiometry is suitable, epitaxially oriented Ti2AlC MAX phase with significant O incorporated is formed. The results indicate that Al2O3 is not an ideal substrate material for the growth of transition metal carbides and MAX phase thin films.
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Dates
Type | When |
---|---|
Created | 17 years, 5 months ago (March 17, 2008, 6:45 p.m.) |
Deposited | 2 years, 1 month ago (June 30, 2023, 3 p.m.) |
Indexed | 3 weeks, 1 day ago (July 30, 2025, 6:51 a.m.) |
Issued | 17 years, 5 months ago (March 15, 2008) |
Published | 17 years, 5 months ago (March 15, 2008) |
Published Online | 17 years, 5 months ago (March 17, 2008) |
Published Print | 17 years, 5 months ago (March 15, 2008) |
@article{Persson_2008, title={A solid phase reaction between TiCx thin films and Al2O3 substrates}, volume={103}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2896637}, DOI={10.1063/1.2896637}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Persson, P. O. Å. and Rosen, J. and McKenzie, D. R. and Bilek, M. M. M. and Höglund, C.}, year={2008}, month=mar }