DOI: 10.1063/1.2891081. Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique

Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique

10.1063/1.2891081

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atom-probe technique was applied to analyze three-dimensional dopant distribution in Si substrate of metal-oxide-semiconductor field effect transistor (MOSFET) structure. As a result, three-dimensional As atom distribution implanted in Si was obtained. The quantification of the As atom distribution in a depth direction was confirmed as compared with the one-dimensional distribution measured by secondary ion mass spectroscopy. Moreover, monolayer segregation of As atoms at the interface between gate oxide and Si substrate was clearly observed. This result shows the possibility to clarify discrete dopant distribution in Si substrate related to the characteristic variation of MOSFETs.

Bibliography

Inoue, K., Yano, F., Nishida, A., Tsunomura, T., Toyama, T., Nagai, Y., & Hasegawa, M. (2008). Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique. Applied Physics Letters, 92(10).

Authors 7

Koji Inoue (first)
Fumiko Yano (additional)
Akio Nishida (additional)
Takaaki Tsunomura (additional)
Takeshi Toyama (additional)
Yasuyoshi Nagai (additional)
Masayuki Hasegawa (additional)

References 11 Referenced 23

10.1109/16.333844 / IEEE Trans. Electron Devices (1994)
10.1109/16.711362 / IEEE Trans. Electron Devices (1998)
10.1109/16.777162 / IEEE Trans. Electron Devices (1999)
10.1063/1.2709758 / Rev. Sci. Instrum. (2007)
10.1017/S1431927604040565 / Microsc. Microanal. (2004)
10.1063/1.2005368 / Appl. Phys. Lett. (2005)
10.1088/0268-1242/22/1/S30 / Semicond. Sci. Technol. (2007)
10.1116/1.2141621 / J. Vac. Sci. Technol. B (2006)
10.1126/science.1145428 / Science (2007)
10.1016/j.ultramic.2006.06.008 / Ultramicroscopy (2007)
10.1016/S0304-3991(99)00055-8 / Ultramicroscopy (1999)

Dates

Type	When
Created	17 years, 5 months ago (March 11, 2008, 6:48 p.m.)
Deposited	2 years, 1 month ago (June 25, 2023, 7:21 a.m.)
Indexed	3 weeks, 2 days ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 5 months ago (March 10, 2008)
Published	17 years, 5 months ago (March 10, 2008)
Published Online	17 years, 5 months ago (March 11, 2008)
Published Print	17 years, 5 months ago (March 10, 2008)

Funders 0

None

BibTeX

@article{Inoue_2008, title={Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2891081}, DOI={10.1063/1.2891081}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Inoue, Koji and Yano, Fumiko and Nishida, Akio and Tsunomura, Takaaki and Toyama, Takeshi and Nagai, Yasuyoshi and Hasegawa, Masayuki}, year={2008}, month=mar }

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